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BCP55-16 +BOM

Bipolar (BJT) Transistor NPN 60 V 1 A 100MHz 1.3 W Surface Mount SOT-223

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BCP55-16 General Description

Bipolar (BJT) Transistor NPN 60 V 1 A 100MHz 1.3 W Surface Mount SOT-223

Key Features

  • High current
  • Three current gain selections
  • High power dissipation capability

Application

  • Linear voltage regulators
  • Power management
  • Low-side switches
  • MOSFET drivers
  • Battery-driven devices
  • Amplifiers

Specifications

Part Life Cycle Code Active Reach Compliance Code compliant
ECCN Code EAR99 Case Connection COLLECTOR
Collector Current-Max (IC) 1 A Collector-Emitter Voltage-Max 60 V
Configuration SINGLE DC Current Gain-Min (hFE) 100
JESD-30 Code R-PDSO-G4 Moisture Sensitivity Level 1
Number of Elements 1 Number of Terminals 4
Operating Temperature-Max 150 °C Operating Temperature-Min -55 °C
Peak Reflow Temperature (Cel) 260 Polarity/Channel Type NPN
Power Dissipation-Max (Abs) 2 W Surface Mount YES
Terminal Form GULL WING Terminal Position DUAL
Transistor Application SWITCHING Transistor Element Material SILICON
Transition Frequency-Nom (fT) 100 MHz VCEsat-Max 0.5 V

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In Stock: 9,307

Minimum Order: 1

Qty. Unit Price Ext. Price
5+ $0.082 $0.41
50+ $0.066 $3.30
150+ $0.058 $8.70
1000+ $0.053 $53.00
2000+ $0.048 $96.00
5000+ $0.046 $230.00

The prices below are for reference only.

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