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AT-41533-TR1G

RF Bipolar Transistors Transistor Si

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AT-41533-TR1G General Description

RF Transistor NPN 12V 50mA 225mW Surface Mount SOT-23

Key Features

  • General Purpose NPN Bipolar Transistor
  • 900 MHz Performance:
  • AT-41511: 1 dB NF, 15.5 dB GA
  • AT-41533: 1 dB NF, 14.5 dB GA
  • Characterized for 3, 5, and 8 Volt Use
  • SOT-23 and SOT-143 SMT Plastic Packages
  • Tape-and-Reel Packaging Option Available
  • Lead-free

Specifications

Part Life Cycle Code Obsolete Reach Compliance Code compliant
ECCN Code EAR99 Additional Feature HIGH RELIABILITY
Collector Current-Max (IC) 0.05 A Collector-Emitter Voltage-Max 12 V
Configuration SINGLE DC Current Gain-Min (hFE) 30
Highest Frequency Band C BAND JESD-30 Code R-PDSO-G3
JESD-609 Code e3 Moisture Sensitivity Level 1
Number of Elements 1 Number of Terminals 3
Operating Temperature-Max 150 °C Peak Reflow Temperature (Cel) 260
Polarity/Channel Type NPN Power Dissipation-Max (Abs) 0.225 W
Qualification Status Not Qualified Surface Mount YES
Terminal Finish MATTE TIN Terminal Form GULL WING
Terminal Position DUAL Transistor Application AMPLIFIER
Transistor Element Material SILICON Transition Frequency-Nom (fT) 10000 MHz

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