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AOD5B65M1 +BOM

Insulated Gate Bipolar Transistor (IGBT) Module: N-Channel, 650 Volts, 10 Amps, 69 Watts, 3-Pin(2+Tab) DPAK, Tape and Reel Packaging

AOD5B65M1 General Description

IGBT 650 V 10 A 69 W Surface Mount TO-252 (DPAK)

AOD5B65M1

Specifications

ECCN (US) EAR99 Part Status NRND
Automotive PPAP
Channel Type N Configuration Single
Maximum Gate Emitter Voltage (V) ±30 Maximum Collector-Emitter Voltage (V) 650
Typical Collector Emitter Saturation Voltage (V) 1.57 Maximum Continuous Collector Current (A) 10
Maximum Gate Emitter Leakage Current (uA) 0.1 Maximum Power Dissipation (mW) 69
Minimum Operating Temperature (°C) -55 Maximum Operating Temperature (°C) 150
Packaging Tape and Reel Mounting Surface Mount
PCB changed 2 Tab Tab
Pin Count 3

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Ratings and Reviews

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C
C**b 04/29/2021

Very good! Delivery by courier to the door. Thanks,great service. Product with mind quality!

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In Stock: 5,223

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Qty. Unit Price Ext. Price
1+ $0.693 $0.69
10+ $0.571 $5.71
30+ $0.509 $15.27
100+ $0.448 $44.80
500+ $0.324 $162.00
1000+ $0.305 $305.00

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