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A2G35S200-01SR3

Airfast RF Power GaN Transistor, 3400-3600 MHz, 40 W AVG., 48 V

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A2G35S200-01SR3 General Description

RF Mosfet 48 V 291 mA 3.4GHz ~ 3.6GHz 16.1dB 180W NI-400S-2S

NXP Semiconductor Inventory

Key Features

Airfast RF Power GaN Transistor, 3400-3600 MHz, 40 W AVG., 48 V
NXP Semiconductor Original Stock
NXP Semiconductor Inventory

Specifications

Frequency (Min) (MHz) 3400 Frequency (Max) (MHz) 3600
Supply Voltage (Typ) (V) 48 Peak Power (Typ) (dBm) 53.5
Peak Power (Typ) (W) 225 Die Technology GaN

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A2G35S200-01SR3 Datasheet PDF

Preliminary Specification A2G35S200-01SR3 PDF Download

A2G35S200-01SR3 PDF Preview

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