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71V67603S133BGG

SRAM - Synchronous, SDR Memory IC 9Mbit Parallel 133 MHz 4.2 ns 119-PBGA (14x22)

Manufacturer:

Renesas Electronics
Mfr.Part #:

71V67603S133BGG
Datasheet:

71V67603S133BGG Datasheet (PDF)
Memory Size:

9 Mbit
Organization:

256 k x 36
Access Time:

4.2 ns
Maximum Clock Frequency:

133 MHz
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71V67603S133BGG General Description

The 71V67603 3.3V CMOS SRAM is organized as 256K x 36. The 71V67603 SRAM contains write, data, address and control registers. The burst mode feature offers the highest level of performance to the system designer, as it can provide four cycles of data for a single address presented to the SRAM.The order of these three addresses are defined by the internal burst counter and the LBO input pin.

Key Features

High system speed 166MHz (3.5ns clock access time)
LBO input selects interleaved or linear burst mode
Self-timed write cycle with global write control (GW), byte
write enable (BWE), and byte writes (BWx)
3.3V core power supply
Power down controlled by ZZ input
3.3V I/O supply (VDDQ)
Available in 100-pin TQFP, 119-pin BGA and 165 fpBGA packages

Specifications

Product Category	SRAM	Memory Size	9 Mbit
Organization	256 k x 36	Access Time	4.2 ns
Maximum Clock Frequency	133 MHz	Interface Type	Parallel
Supply Voltage - Max	3.465 V	Supply Voltage - Min	3.135 V
Supply Current - Max	260 mA	Minimum Operating Temperature	0 C
Maximum Operating Temperature	+ 70 C	Mounting Style	SMD/SMT
Height	2.15 mm	Length	14 mm
Memory Type	SDR	Moisture Sensitive	Yes
Product Type	SRAM	Series	71V67603S133
Factory Pack Quantity	84	Subcategory	Memory & Data Storage
Type	Synchronous	Width	22 mm
Part # Aliases	IDT71V67603S133BGG 71V67603