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2SB1351 +BOM
The product labeled 2SB1351 is characterized by its Darlington PNP transistor configuration
TO-220F-
Manufacturer:
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Mfr.Part #:
2SB1351
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Datasheet:
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Transistor Type:
PNP - Darlington
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Current - Collector (Ic) (Max):
12 A
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Voltage - Collector Emitter Breakdown (Max):
60 V
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Vce Saturation (Max) @ Ib, Ic:
1.5V @ 20mA, 10A
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EDA/CAD Models:
Availability: 6989 PCS
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2SB1351 General Description
The 2SB1351 PNP silicon transistor is a robust and dependable component that delivers consistent performance in a range of electronic applications. With its high collector current (IC) rating of 2A, collector-emitter voltage (VCEO) rating of 50V, and power dissipation (Ptot) of 20W, this transistor is well-equipped to handle demanding tasks. Its transition frequency (fT) of 30MHz also makes it suitable for high-frequency applications, further enhancing its versatility
Key Features
- High DC current gain (Darlington)
Application
- Relay driver
- Solenoid driver
- Motor driver
Specifications
Category | Discrete Semiconductor ProductsTransistorsBipolar (BJT)Single Bipolar Transistors | Series | - |
Transistor Type | PNP - Darlington | Current - Collector (Ic) (Max) | 12 A |
Voltage - Collector Emitter Breakdown (Max) | 60 V | Vce Saturation (Max) @ Ib, Ic | 1.5V @ 20mA, 10A |
Current - Collector Cutoff (Max) | 10µA (ICBO) | DC Current Gain (hFE) (Min) @ Ic, Vce | 2000 @ 10A, 4V |
Power - Max | 30 W | Frequency - Transition | 130MHz |
Operating Temperature | 150°C (TJ) | Mounting Type | Through Hole |
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In Stock: 6,989
Minimum Order: 1
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