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2SB1255 +BOM

Robust construction for long-term reliability

email Email: [email protected]
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tel Tel: +852 95804164

2SB1255 General Description

Power Bipolar Transistor, 8A I(C), 140V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin, ROHS COMPLIANT, TOP-3F-A1, SC-92, FULL PACK-3

Key Features

  • Optimum for 90W HiFi output
  • High foward current transfer ratio hFE: 5000 to 30000
  • Low collector to emitter saturation voltage VCE(sat): <–2.5V
  • Full-pack package which can be installed to the heat sink with one screw

Specifications

Part Life Cycle Code Obsolete Pin Count 3
ECCN Code EAR99 Case Connection ISOLATED
Collector Current-Max (IC) 8 A Collector-Emitter Voltage-Max 140 V
Configuration DARLINGTON WITH BUILT-IN RESISTOR DC Current Gain-Min (hFE) 5000
JESD-30 Code R-PSFM-T3 Number of Elements 1
Number of Terminals 3 Operating Temperature-Max 150 °C
Polarity/Channel Type PNP Power Dissipation-Max (Abs) 3 W
Qualification Status Not Qualified Surface Mount NO
Terminal Form THROUGH-HOLE Terminal Position SINGLE
Transistor Application AMPLIFIER Transistor Element Material SILICON
Transition Frequency-Nom (fT) 20 MHz

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AVAQ determines and packages all devices based on electrostatic discharge (ESD) and moisture sensitivity level (MSL) protection requirements.

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