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See Technical Specifications

2N5196 +BOM

TRANSISTOR,JFET,N-CHANNEL, DUAL,50V V(BR)DSS,7MA I(DSS),TO-71(6)

Manufacturer:

InterFET
Mfr.Part #:

2N5196
Datasheet:

2N5196 Datasheet (PDF)
Technology:

Si
Mounting Style:

Through Hole
Transistor Polarity:

N-Channel
Configuration:

Dual
EDA/CAD Models:

Request Free CAD Models for 2N5196

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2N5196 General Description

DESCRIPTIONThe 2N5196/5197/5198/5199 JFET duals are designed for high-performance differential amplification for a wide range of precision test instrumentation applications. This series features tightly matched specs, low gate leakage for accuracy, and wide dynamic range with IG guaranteed at VDG = 20 V.The hermetically-sealed TO-71 package is available with full military processing (see Military Information and the 2N5545/5546/5547JANTX/JANTXV data sheet).FEATURES ● Monolithic Design● High Slew Rate● Low Offset/Drift Voltage● Low Gate Leakage: 5 pA● Low Noise● High CMRR: 100 dBBENEFITS● Tight Differential Match vs. Current● Improved Op Amp Speed, Settling Time Accuracy● Minimum Input Error/Trimming Requirement● Insignificant Signal Loss/Error Voltage● High System Sensitivity● Minimum Error with Large Input SignalAPPLICATIONS● Wideband Differential Amps● High-Speed, Temp-Compensated, Single-Ended Input Amps● High Speed Comparators● Impedance Converters

Specifications

Product Category	JFET	Technology	Si
Mounting Style	Through Hole	Transistor Polarity	N-Channel
Configuration	Dual	Vds - Drain-Source Breakdown Voltage	10 V
Vgs - Gate-Source Breakdown Voltage	- 50 V	Gate-Source Cutoff Voltage	- 4 V
Drain-Source Current at Vgs=0	7 mA	Id - Continuous Drain Current	5 mA
Pd - Power Dissipation	300 mW	Forward Transconductance - Min	1 mS
Product Type	JFETs	Factory Pack Quantity	1
Subcategory	Transistors	Type	JFET