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1N4150 +BOM

Diode 50 V 200mA Through Hole DO-35

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Diode 50 V 200mA Through Hole DO-35

Silicon epitaxial planar diode,For general purpose and switching,AEC-Q101 qualified available (part number on request)

Pbfree Code	Yes	Part Life Cycle Code	Active
Reach Compliance Code	compliant	ECCN Code	EAR99
HTS Code	8541.10.00.70	Case Connection	ISOLATED
Configuration	SINGLE	Diode Element Material	SILICON
Diode Type	RECTIFIER DIODE	JEDEC-95 Code	DO-35
JESD-30 Code	O-LALF-W2	JESD-609 Code	e3
Number of Elements	1	Number of Phases	1
Number of Terminals	2	Operating Temperature-Max	200 °C
Operating Temperature-Min	-65 °C	Output Current-Max	0.2 A
Peak Reflow Temperature (Cel)	265	Power Dissipation-Max	0.5 W
Qualification Status	Not Qualified	Reverse Recovery Time-Max	0.004 µs
Surface Mount	NO	Terminal Finish	MATTE TIN
Terminal Form	WIRE	Terminal Position	AXIAL
Time@Peak Reflow Temperature-Max (s)	10	Product Category	Diodes - General Purpose, Power, Switching
Mounting Style	Through Hole	Peak Reverse Voltage	75 V
Max Surge Current	4 A	If - Forward Current	200 mA
Recovery Time	6 ns	Vf - Forward Voltage	1 V
Ir - Reverse Current	100 nA	Minimum Operating Temperature	- 65 C
Maximum Operating Temperature	+ 175 C	Height	1.91 mm
Length	4.56 mm	Product Type	Diodes - General Purpose, Power, Switching
Factory Pack Quantity	2000	Subcategory	Diodes & Rectifiers
Type	Switching Diode	Vr - Reverse Voltage	75 V
Width	1.91 mm	Part # Aliases	1N4150_NL
Unit Weight	0.004833 oz