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(33 parts in total)
Mfr.Part# Description Manufacturer In Stock Operation
MT48LC32M16A2TG-75IT SDR SDRAM DRAM Chip 512Mbit 32Mx16 3.3V 54-Pin TSOP-II Tray Micron Technology 9,630 Add to BOM
K4S561632N-LC75 256Mbit SDRAM DRAM Chip 16Mx16 3.3V 54-Pin TSOP-II Samsung Electronics 8,562 Add to BOM
K4S561632J-UC75 Memory chip with dynamic random access technology, providing 256Mbit of storage capacity in a 16Mx16 configuration Samsung Electronics 6,543 Add to BOM
MT48LC2M32B2TG-6 SDRAM with 2M x 32 capacity and 86-pin plastic TSSOP package Micron Technology 5,420 Add to BOM
MT48LC16M16A2TG-75 This SDR SDRAM chip known as MT48LC16M16A2TG-75 features a 54-pin TSOP-II packaging, making it suitable for various electronic devices Micron Technology 9,798 Add to BOM
K4S561632H-UC75 TSOP-II packaged DRAM chip capable of storing 256Mbits of data Samsung Electronics 5,707 Add to BOM
MT48LC16M16A2P-75 IT:D TR The 54-TSOP II package design of the memory IC allows for easy integration into electronic devices Micron Technology 7,445 Add to BOM
K6R4008V1D-UI10 4M-bit SRAM Chip Samsung Electronics 5,961 Add to BOM
K4S561632E-TC75 High-performance memory solution for demanding applications Samsung Electronics 8,011 Add to BOM
NT5DS32M16ES-5T The NT5DS32M16ES-5T is a DDR1 memory component that offers 512Mb of capacity and operates at a frequency of 200MHz Nanya Technology 5,171 Add to BOM
MT48LC4M32B2P-7 DRAM Chip SDRAM 128Mbit Micron Technology 9,325 Add to BOM
K4S561632E-UC75 It has a capacity of 256Mbit and is organized as 16Mx16 Samsung Electronics 8,043 Add to BOM
K6R4016V1D-UI10 Standard 10ns latency Samsung Electronics 7,034 Add to BOM
MT48LC8M16A2TG-7E 128Mbit memory module Micron Technology 5,282 Add to BOM
MT48LC8M16A2TG-75 Synchronous DRAM with 8MX16 capacity and 5.4ns speed in CMOS technology, available in PDSO54 package with 0.400 INCH width and TSOP2-54 design Micron Technology 6,285 Add to BOM
MT48LC2M32B2P-6 Next-generation DRAM technology for improved performan Micron Technology 9,746 Add to BOM
K6X4016C3F-TF55 This product is a standard SRAM with a capacity of 256KX16 and a speed of 55 nanoseconds Samsung Electronics 8,256 Add to BOM
K4S561632J-UC75000 DRAM Chip SDRAM 256Mbit Samsung Electronics 9,820 Add to BOM
MT48LC16M16A2P-75:DTR High-capacity RAM solution for MHz processing nee Micron Technology 7,636 Add to BOM
MT48LC32M8A2P-7E:G 54-Pin TSOP-II package with dimensions suited for efficient integration Micron Technology 6,398 Add to BOM
MT48LC32M16A2P-75ITC Advanced SDRAM technology for reliable and efficient data processing." (64 characters) Micron Technology 2,279 Add to BOM
IS42VM16160D-8TLI Mobile SDRAM chip with a capacity of 256Mbit Integrated Silicon Solution Inc 4,108 Add to BOM
MT48LC16M16A2P-7EIT:G Efficiently designed synchronous dynamic random-access memory Micron Technology 6,852 Add to BOM
MT48LC2M32B2TG-7IT High-Density Storage Solution for Data Centers and Server Micron Technology 3,380 Add to BOM
MT48LC8M16A2TG-75IT:G High-capacity SDRAM memory module with bit storag Micron Technology 3,464 Add to BOM
MT48LC4M16A2TG-75:G Advanced synchronous DRAM chip offering improved data transfer rates and reduced power consumptio Micron Technology 7,479 Add to BOM
MT48LC2M32B2TG-7:G Compact PDSO package with ns access time for improved system performanc Micron Technology 7,251 Add to BOM
MT48LC16M8A2TG-75:G Ideal for use in industrial control systems, automotive electronics, and medical device Micron Technology 3,210 Add to BOM
MT48LC16M16A2TG-7E D High-density, low-power SDRAM ideal for embedded systems and mobile devices Micron Technology 3,586 Add to BOM
MT48LC16M16A2P-7EITD Advanced memory technology for industrial control and automatio Micron Technology 4,942 Add to BOM
MT48LC4M32B2P-6 IT:G 86-TSOP II Package Micron Technology 4,307 Add to BOM
MT48LC8M16A2P-7E:G TR 5.4 Nanosecond Access Time Micron Technology 8,225 Add to BOM
MT48LC16M4A2P-75:G 3.3V 54-Pin TSOP-II Tray DRAM Chip, SDR SDRAM 64Mbit, 16Mx4 Micron Technology 7,768 Add to BOM