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TO-3PN-3
(69 parts in total)| Mfr.Part# | Description | Manufacturer | In Stock | Operation |
|---|---|---|---|---|
| IRFS450B | B-FET N-Channel 500V MOSFET | Onsemi | 6,862 | Add to BOM |
| 2SK2837 | Advanced pin TO-N packaged device offering superior switching capabilities up to | Toshiba | 6,898 | Add to BOM |
| 2SK2915 | General-purpose FET capable of handling high power applications, compliant with RoHS regulations | Toshiba | 7,072 | Add to BOM |
| 2SK2698 | Robust 3-pin device for general-purpose power control, delivering precise control and reliability | Toshiba | 4,358 | Add to BOM |
| GT10Q101 | Fast-switching transistor ideal for renewable energy and grid tie inverter | TOSHIBA | 6,032 | Add to BOM |
| GT10J301 | GT10J301 IGBT Transistors - Three-Phase IGBT PP2 | TOSHIBA | 7,564 | Add to BOM |
| FDA20N50 | TO-3PN MOSFETs ROHS: Description for FDA20N50 | Fairchild Semiconductor | 5,715 | Add to BOM |
| FQA90N15 | 50V 90A Power MOSFET N-Channel 18mΩ | Onsemi | 6,091 | Add to BOM |
| FQA11N90C | C-Series 900V N-Channel MOSFET | Onsemi | 7,499 | Add to BOM |
| 2SK2968 | High voltage N-channel MOSFET capable of handling up to 900V and delivering a current of 10A, with a Rds(on) value of 1.25 ohms | Toshiba | 7,072 | Add to BOM |
| 2SK2607 | 2SK2607: N-channel MOSFET capable of handling 9A at 800V | Toshiba | 7,072 | Add to BOM |
| FQA28N50F | Transistor MOSFET | Onsemi | 5,423 | Add to BOM |
| GT30J121 | Featuring a TO3PN package, GT30J121 is an N-channel IGBT capable of enhancing performance at voltages up to 600V and currents up to 30A | Toshiba | 7,411 | Add to BOM |
| GT20J301 | Reliable and High-Performance IGBT Modules for Industrial Automation, Electric Vehicle Charging, and Alternative Energy Solution | Toshiba | 6,958 | Add to BOM |
| FQA11N90 | TO-247VAR N-Channel MOSFET Transistor | Onsemi | 4,409 | Add to BOM |
| FQA24N50 | Power MOSFET, N-Channel, QFET®, 500 V, 24 A, 200 mΩ, TO-3P | Onsemi | 5,797 | Add to BOM |
| FCA47N60 | 650V MOSFET SUPER FET FCA47N60 | onsemi | 7,216 | Add to BOM |
| FDA59N30 | Tube packaging of N-channel 300V 59A MOSFET with TO-3P pins | Onsemi | 6,545 | Add to BOM |
| FDA38N30 | TO-3PN-3 MOSFETs ROHS | Onsemi | 4,441 | Add to BOM |
| FDA28N50F | TO-3P Packaged N-type MOSFET, 500 Volts, 28 Amperes | Onsemi | 5,069 | Add to BOM |
| FDA24N40F | Advanced 400V N-Channel MOSFET design for high-reliability operations | Onsemi | 7,072 | Add to BOM |
| FQA70N10 | This Power MOSFET | Onsemi | 9,989 | Add to BOM |
| FQA140N10 | N-channel 100V 140A power MOSFET in TO-3P(N) package, suitable for high-current applications | Onsemi | 7,474 | Add to BOM |
| SSS6N70A | TO-220F package | Fairchild Semiconductor | 6,701 | Add to BOM |
| IRFS350A | With its robust design and high-performance specifications | Fairchild Semiconductor | 5,833 | Add to BOM |
| FQA9N90C | Three-pin TO-3PN package with tab for N-channel 900V 9A MOSFET | onsemi | 4,500 | Add to BOM |
| FQA10N80C | High-voltage N-channel MOSFET with advanced QFET technology | Fairchild Semiconductor | 6,276 | Add to BOM |
| FQA16N50 | Description of item: N-Channel MOSFET with 500V voltage rating | Fairchild Semiconductor | 7,533 | Add to BOM |
| 2SK2847 | Latest technology integrated circuit designed for high-frequency switching, featuring low noise and high speed capabilities | Toshiba | 7,271 | Add to BOM |
| 2SK2611 | Reliable and efficient switching device for industrial automation systems | Toshiba | 7,692 | Add to BOM |
| FQA85N06 | TO-3P Through Hole package for easy mounting on PCBs | Onsemi | 4,726 | Add to BOM |
| FQA47P06 | P-Channel Power MOSFET with 60V voltage rating and 55A current rating | Onsemi | 4,355 | Add to BOM |
| FGA30N65SMD | TO-3PN-3 IGBTs ROHS | Onsemi | 5,957 | Add to BOM |
| SSH10N60B | Power Field-Effect Transistor | onsemi | 5,321 | Add to BOM |
| IRFP350A | IRFP350A is a 400V N-channel MOSFET designed for rail applications | Fairchild Semiconductor | 6,700 | Add to BOM |
| FQA19N20 | Transistor MOSFET N-channel 200V 23A TO-3P Rail | onsemi | 6,576 | Add to BOM |
| TK15J60U | Transistor TK15J60U: 15A, 600V, 0.3 ohm, N-channel, Silicon, Power MOSFET | toshiba | 8,537 | Add to BOM |
| FCA20N60S | High-voltage MOSFET with Super FET design | Onsemi | 5,078 | Add to BOM |
| 2SK2613 | TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (PIE-MOSIII) | toshiba | 9,157 | Add to BOM |
| SSH25N40A | High-power N-Channel FET with 25A Drain Current and 400V Voltage | SAMSUNG SEMICONDUCTOR INC | 8,809 | Add to BOM |
| TK20J60U | MOSFET Super Junction Power Mosfet | Toshiba | 9,105 | Add to BOM |
| IRFP140A | Efficient Power Handling, IRFP140A A-FET N-Channel MOSFET | SAMSUNG SEMICONDUCTOR INC | 7,121 | Add to BOM |
| 2SK2602 | TRANSISTOR 6 A, 600 V, 1.25 ohm, N-CHANNEL, Si, POWER, MOSFET, 2-16C1B, SC-65, 3 PIN, FET General Purpose Power | TOSHIBA CORP | 7,343 | Add to BOM |
| 2SK2699 | Low-resistance and high-voltage transistor for reliable performanc | Toshiba | 7,072 | Add to BOM |
| 2SK2313(F) | High-performance power electronics soluti | Toshiba | 7,072 | Add to BOM |
| GT20J101 | -16C1C-3 Transistor | Toshiba | 5,731 | Add to BOM |
| FQA55N25 | Ideal for DC-DC conversion, motor control, and power conditioning system | Onsemi | 5,901 | Add to BOM |
| FQA28N50 | Rail-to-Rail MOSFET with N-channel design, capable of handling up to 500V and 28.4A | Onsemi | 8,623 | Add to BOM |
| FQA70N15 | Power MOSFET with N-Channel features | Onsemi | 5,994 | Add to BOM |
| FQA65N20 | Product Description: 200V 65A N Channel MOSFET | Onsemi | 6,725 | Add to BOM |
Other Package