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(36 parts in total)
Mfr.Part# Description Manufacturer In Stock Operation
FGA60N65SMD TO-3P-3 IGBTs ROHS Onsemi 3,900 Add to BOM
FGA40N65SMD Description of product FGA40N65SMD, Trans IGBT Chip N-CH 650V 80A 349mW 3-Pin(3+Tab) TO-3P Tube Onsemi 7,809 Add to BOM
IRFP150A IRFP150A: TO-3P-3 package N-channel MOSFET featuring a low on-resistance of 40mΩ at 10V, suitable for ROHS-compliant electronics Fairchild Semiconductor 4,511 Add to BOM
FQA22P10 Rail-Mountable P-Channel MOSFET, 100V Voltage Rating, 24A Current Capacity onsemi 8,641 Add to BOM
2SD1559 Robust and versatile component for power electronics systems Sptech 7,917 Add to BOM
2SC2625 Features high current handling, low input impedance, and a high current gai Sptech 4,404 Add to BOM
FGA30T65SHD 238W 60A 650V FS(Field Stop) TO-3P-3 IGBTs ROHS Onsemi 7,595 Add to BOM
FGA40T65SHD 268W 80A 650V FS(Field Stop) TO-3PN IGBTs ROHS Onsemi 7,696 Add to BOM
20JL2C41A(F) Rectifier Diode Switching 600V 20A 35ns 3-Pin(3+Tab) TO-3PN TOSHIBA 6,091 Add to BOM
30GWJ2C42C Rectifier diode utilizing Schottky technology, designed for 40V operation with a 30A current rating, packaged in TO-3PN configuration toshiba 7,206 Add to BOM
2SA1941-O(Q) Bipolar Transistors - PNP BJT with a Maximum Voltage Rating of -140V toshiba 8,453 Add to BOM
2SK2150 FET 15A, 500V MOSFET Toshiba 8,177 Add to BOM
20DL2C41A 3-Pin Rectifier Diode Switching TO-3PN Toshiba 8,572 Add to BOM
2SK4108(F) Transistor MOSFET N-Channel Silicon 500V 20A 3-Pin(3+Tab) TO-3PN Toshiba 9,093 Add to BOM
2SK2837(Q) 2SK2837(Q) is a silicon N-channel MOSFET featuring a low on-resistance of 0.27 ohms Toshiba 5,997 Add to BOM
2SC5354-1(F) High-performance power amplifier transistor for demanding application Toshiba 7,072 Add to BOM
FFA60UP20DN Compact and efficient PNA- rectifier module for demanding power conversion tasks onsemi 7,072 Add to BOM
FCA20N60 Power MOSFET, N-Channel, SUPERFET®, Easy Drive, 600 V, 20 A, 190 mΩ, TO-3P onsemi 7,072 Add to BOM
FGA25N120ANTDTU-F109 TO-3P packaged N-channel IGBT chip capable of handling voltages up to 1200V and currents up to 50A, ideal for high-power electronic systems ON 4,696 Add to BOM
FDA24N50F N-Channel 500 V 24A (Tc) 270W (Tc) Through Hole TO-3PN onsemi 7,072 Add to BOM
FDA032N08 N-Channel PowerTrench® MOSFET 75V, 235A, 3.2mΩ onsemi 7,378 Add to BOM
FQA30N40 N-Channel Power MOSFET with QFET® technology, 400V, 30A, 140mΩ, TO-3P package onsemi 7,072 Add to BOM
FDA2712 This component has a power dissipation of 357W at 10V and a threshold voltage of 5V at 250uA ROCHESTER ELECTRONICS LLC 8,564 Add to BOM
FQA36P15 Power MOSFET, P-Channel, QFET®, -150 V, -36 A, 90 mΩ, TO-3P ON Semiconductor, LLC 3,330 Add to BOM
2SK1358 N-channel device suitable for high-frequency switching circuit Toshiba 3,816 Add to BOM
2SA1232 High-performance TO-3PN package for industrial and consumer use Renesas 3,175 Add to BOM
2SC3679 - 5A I(C), 800V V(BR)CEO Sptech 5,520 Add to BOM
FCA47N60-F109 N-channel MOSFET onsemi 7,072 Add to BOM
2SC5242-O High-power transistor suitable for general-purpose amplifying and switching applications Toshiba 2,935 Add to BOM
2SC5198-O(Q) High-gain transistor for amplification and switching applications; suitable for general-purpose use up to and Toshiba 2,091 Add to BOM
FGA6530WDF IGBT, 650 V, 30 A Field Stop Trench onsemi 7,520 Add to BOM
FGA5065ADF IGBT, 650 V, 50 A Field Stop Trench onsemi 7,841 Add to BOM
2SK4207(Q) Trans MOSFET N-CH Si 900V 13A 3-Pin(3+Tab) TO-3PN TOSHIBA 9,933 Add to BOM
2SK370-GR(F) Trans JFET N-CH 6.5mA Si 3-Pin(3+Tab) TO-3PN TOSHIBA 6,151 Add to BOM
FYA3010DNTU Diode Array 1 Pair Common Cathode 100 V 30A Through Hole TO-3P-3, SC-65-3 onsemi 9,507 Add to BOM
FCA20N60-F109 N-Channel 600 V 20A (Tc) 208W (Tc) Through Hole TO-3PN onsemi 9,694 Add to BOM