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(32 parts in total)
Mfr.Part# Description Manufacturer In Stock Operation
TK100L60W Si N-channel MOSFET, 600V, 100 Amps, TO-3PL Encapsulation Toshiba Semiconductor 7,496 Add to BOM
2SA1943 Compact TO-package ideal for space-constrained design Onsemi 4,682 Add to BOM
GT20D101 High-power electronic component for switching and amplification applications, ideal for industrial control system Toshiba 4,424 Add to BOM
2SK1520 N-channel MOSFET for demanding power application Renesas 6,431 Add to BOM
2SK1019 Metal-oxide semiconductor transistor for reliable operatio Fuji Electric Co Ltd 7,261 Add to BOM
2SC5144 Robust and reliable Si-based power device suitable for general purpose use Toshiba 5,664 Add to BOM
2SC3281 NPN type, suitable for audio and switching circui Sptech 7,268 Add to BOM
FGL60N170D Insulated Gate Bipolar Transistor, 60A I(C), 1700V V(BR)CES, N-Channel, TO-264AA, TO-264, 3 PIN FAIRCHILD 5,832 Add to BOM
GT60M102 TRANSISTOR 60 A, 900 V, N-CHANNEL IGBT, Insulated Gate BIP Transistor TOSHIBA 4,634 Add to BOM
2SK1020 Power Field-Effect Transistor, 30A I(D), 500V, 0.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3PL, 3 PIN FUJITSU 6,101 Add to BOM
2SK1519 30A, 450V, 0.15ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3PL, 3 PIN NXP 7,085 Add to BOM
2SD2155 TRANSISTOR 15 A, 180 V, NPN, Si, POWER TRANSISTOR, BIP General Purpose Power TOSHIBA 4,716 Add to BOM
IXSK30N60BD1 IGBT Transistors 55 Amps 600V 2 Rds IXYS Corporation 5,218 Add to BOM
NDTL03N150CG <p>NDTL03N150C is a Power MOSFET, 1500V, 10.5Ω, 2.5A, N-Channel.</p> onsemi 7,457 Add to BOM
MJL4302AG MJL4302AG is a high-power PNP bipolar junction transistor designed for use in various general purpose electronic applications ON 8,070 Add to BOM
MJL4281AG MJL4281AG is a complementary silicon power transistor with a voltage rating of 350 volts and a current handling capability of 15 amps ON 9,541 Add to BOM
2SC5612 High-voltage bipolar transistor designed for high-reliability applications. Toshiba 6,302 Add to BOM
IXGK50N60BD1 Efficient IGBT Transistors with 2.3 Rds IXYS Corporation 3,114 Add to BOM
GT20D201 IGBT Transistors Pb 3PL IGBT PP2,DISCON(03-04)/PHASE-OUT(04-07)/OBSOLETE(04-10),PHASE-OUT-->2004-10-31 TOSHIBA CORP 9,889 Add to BOM
GT60M323 Trans IGBT Chip N-CH 900V 60A 200W 3-Pin(3+Tab) TO-3PL Toshiba Semiconductor 5,956 Add to BOM
TK100L60WVQ(O MOSFET Toshiba 9,113 Add to BOM
GT60N321 High-power, high-voltage IGBT for reliable switching application Toshiba 5,751 Add to BOM
GT50J121 Three-pin transistor with tabulated design for easy integration Toshiba 3,588 Add to BOM
2SC5570 Discontinued high-voltage bipolar transistor, high-power device with limited availability, last ordered in 2007 and EOL since 2010 Toshiba 3,845 Add to BOM
1MBH60D-090 FUJITSU 5,659 Add to BOM
1MBH75-090 FUJITSU 5,958 Add to BOM
1MBH75-100 FUJITSU 4,858 Add to BOM
1MB30D-060 FUJITSU 5,502 Add to BOM
1MBH50-060-F218 FUJITSU 7,219 Add to BOM
1MBH70D-090A FUJITSU 4,146 Add to BOM
1MBH50D-090 FUJITSU 4,551 Add to BOM