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TO-3P
(211 parts in total)| Mfr.Part# | Description | Manufacturer | In Stock | Operation |
|---|---|---|---|---|
| ESAD92-02 | Limited access: Invitation for authorized contract manufacturers onl | Fuji Electric Co Ltd | 6,161 | Add to BOM |
| FMH07N90E | Power Field-Effect Transistor, 7A I(D), 900V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P(Q), 3 PIN | FUJITSU | 5,682 | Add to BOM |
| FMH23N50E | N-Channel MOSFET with TO package and Super FAP-E technolog | Fuji Electric | 6,089 | Add to BOM |
| FEN30DP | Rectifier Diode, 30A, 200V V(RRM), | VISHAY/THINKISEMI/GI | 5,124 | Add to BOM |
| BU931ZPFI | 20A, 350V, NPN, Si, POWER TRANSISTOR, TO-218 | ST | 5,880 | Add to BOM |
| 2SK2197 | Compact and reliable N-channel metal-oxide semiconductor F | Shindengen Electronic Manufacturing Co Ltd | 4,233 | Add to BOM |
| 2SK1488 | TRANSISTOR 10 A, 500 V, 1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3PN, TO-3PN, 3 PIN, FET General Purpose Power | TOSHIBA | 7,356 | Add to BOM |
| THD215HI | 10A, 700V, NPN, Si, POWER TRANSISTOR, ISOWATT218, 3 PIN | ST | 4,681 | Add to BOM |
| S30D60C | Rectifier Diode, Schottky, 1 Phase, 2 Element, 15A, 60V V(RRM), Silicon, PLASTIC, TO-3P, 3 PIN | MOSPEC | 5,920 | Add to BOM |
| RFM10N15 | Transistor | HARRIS | 4,723 | Add to BOM |
| FS18SM-10 | FS18SM-10 Mitsubishi | Renesas Electronics Corporation | 5,483 | Add to BOM |
| FS14SM-16A | Power Field-Effect Transistor, 14A I(D), 800V, 0.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | MITSUBISHI | 6,188 | Add to BOM |
| FMH47N60S1 | Power Field-Effect Transistor, | FUJITSU | 4,220 | Add to BOM |
| BUX98PI | 30A, 450V, NPN, Si, POWER TRANSISTOR | NXP | 5,223 | Add to BOM |
| 2SK2362 | N-channel metal-oxide semiconductor FET for high-speed switchin | Renesas | 4,427 | Add to BOM |
| 2SK1506 | Silicon-based FET for reliable and efficient performance | Fuji Electric Co Ltd | 6,028 | Add to BOM |
| 2SK1492 | Power Field-Effect Transistor, 35A I(D), 250V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, MP-88, 3 PIN | NEC | 6,301 | Add to BOM |
| 2SK1491 | Power Field-Effect Transistor, 25A I(D), 250V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | NEC | 6,319 | Add to BOM |
| 2SK1018 | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET | FUJITSU | 7,812 | Add to BOM |
| 2SD711A | Transistor | FUJITSU | 4,639 | Add to BOM |
| 2SD1090 | TRANSISTOR 5 A, 180 V, NPN, Si, POWER TRANSISTOR, 2-16B1A, 3 PIN, BIP General Purpose Power | TOSHIBA | 5,003 | Add to BOM |
| 2SC5149 | General-purpose power transistor with and rating | Inchange Semiconductor Company Ltd | 6,378 | Add to BOM |
| 2SC3886A | TRANSISTOR 8 A, 600 V, NPN, Si, POWER TRANSISTOR, BIP General Purpose Power | TOSHIBA | 5,074 | Add to BOM |
| 2SC2782 | Advanced bipolar device offering excellent performance characteristic | Advanced Semiconductor Inc | 4,366 | Add to BOM |
| RFK25P08 | Power Field-Effect Transistor, 25A I(D), 80V, 0.15ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AE | RCA/HARRIS | 1 | Add to BOM |
| 2SC5588 | High-performance bipolar transistor for general-purpose applications, offering reliable operation and compact design | Toshiba | 5,208 | Add to BOM |
| BUV48AFI | High-quality power transistor for robust circuitry, designed to handle up to 15 amps of current at 450 volts | ST | 6,893 | Add to BOM |
| 2SK1359 | MOSFET TO3PN PLN,ACTIVE,DISCON(08-10)/PHASE-OUT(10-01)/OBSOLETE(10-04), | TOSHIBA | 7,905 | Add to BOM |
| BUV42 | Robust and reliable design ensures consistent performance under various conditions | TT Electronics | 7,072 | Add to BOM |
| IXGQ90N33TCD1 | With a N-CH configuration, the IXGQ90N33TCD1 is a Trans IGBT Chip capable of handling 330V voltage, 90A current, and 200mW power in a TO-3P package | Ixys | 6,879 | Add to BOM |
| MGD623S | TO-3P Packaged N-channel 600V 50A 150W Trans IGBT Chip | Sanken Electric Co., Ltd | 5,301 | Add to BOM |
| GT40QR21 | High-power 230W N-channel IGBT chip for industrial applications | Toshiba Semiconductor | 5,999 | Add to BOM |
| 2SK4115 | Trans MOSFET N-CH Si 900V 7A 3-Pin(3+Tab) TO-3PN | Toshiba Semiconductor | 7,184 | Add to BOM |
| TK9J90E | Toshiba TK9J90E N-channel MOSFET Transistor, 9 A, 900 V, 3-Pin TO-3PN | Toshiba Semiconductor | 5,562 | Add to BOM |
| GT50JR22 | Versatile IGBT chip ideal for power conversion, motor drives, and other high-current application | Toshiba | 5,250 | Add to BOM |
| FQA9P25 | Power MOSFET, P-Channel, QFET®, -250V, -10.5A, 620mΩ | Fairchild Semiconductor | 5,379 | Add to BOM |
| 2SA1941-O | RoHS Compliant, 3 Pin, 2-16C1A | Toshiba | 7,039 | Add to BOM |
| 2SC4140 | ROHS Bipolar Transistors - BJT TO-3PN | Allegro Microsystems | 4,340 | Add to BOM |
| 2SD2389 | Darlington Silicon NPN Power Transistor | Sanken Electric Co., Ltd | 4,620 | Add to BOM |
| 2SB1383 | With a TO-3P Through Hole package | Allegro Microsystems | 4,922 | Add to BOM |
| 2SD2560 | High Power NPN Darlington Transistor, TO-3P Package, 150V 15A | Allegro Microsystems | 3,464 | Add to BOM |
| 2SD2390 | Darlington NPN Transistor, Rated for 150V and 10A, TO-3P Package with 3 Pins | Allegro Microsystems | 3,091 | Add to BOM |
| 2SB1647 | Transistors TO-3P Darlington ROHS | Allegro Microsystems | 7,764 | Add to BOM |
| 2SD1047 | High power NPN epitaxial planar bipolar transistor | ST | 5,321 | Add to BOM |
| STR-X6729 | Offline switch flyback TO3P IC | Sanken Electric USA Inc. | 7,229 | Add to BOM |
| STR-X6756 | Regulator Switching Model STR-X6756 | Sanken Electric USA Inc. | 7,813 | Add to BOM |
| KA1M0880BTU | TO-3P rail power switch featuring 5 pins and 5 tabs, with a maximum current rating of 8A | Fairchild Semiconductor | 7,451 | Add to BOM |
| LT1084CP#PBF | Low dropout voltage regulator | ADI | 4,535 | Add to BOM |
| FQA55N10 | MOSFET 100V N-Channel QFET | onsemi | 7,072 | Add to BOM |
| FQA19N20C | MOSFET 200V N-Channel Advance Q-FET | ON Semiconductor | 9,070 | Add to BOM |
Other Package