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ZXTN2010ZTA +BOM

Product ZXTN2010ZTA Overview: NPN Transistor with 60V Voltage Rating and 5A Current Capacity

ZXTN2010ZTA Information

Description

The Diodes Incorporated ZXTN2010ZTA is a power bipolar transistor, specifically designed for general-purpose applications. It's an NPN type with a maximum current rating of 5A and a breakdown voltage of 60V. This SOT-89 package transistor features a high current gain and low saturation voltage, making it suitable for use in various electronic circuits such as amplifiers, switches, and drivers. Its compact size and low power consumption make it an attractive option for modern electronics designs. The ZXTN2010ZTA is designed to operate over a wide temperature range (-40°C to 150°C) and has a high reliability due to its robust construction and quality materials. Overall, this transistor offers a reliable and efficient solution for many electronic applications.

Package

According to the product information, the package type of ZXTN2010ZTA is SOT-89.

Pinout

According to the product information, the ZXTN2010ZTA has a 3-pin package (SOT-89) and is an NPN power bipolar transistor. The pin count and function are:

  • Pin 1: Emitter
  • Pin 2: Base
  • Pin 3: Collector

Manufacturer

The manufacturer of the ZXTN2010ZTA is Diodes Incorporated.

Equivalent

Based on the product information, Diodes Incorporated's ZXTN2010ZTA is a Power Bipolar Transistor with specific characteristics. Equivalent products may include:

  • ON Semiconductor NPN transistor (e.g., MJD3015P)
  • STMicroelectronics NPN transistor (e.g., BDV50H10L)
  • Texas Instruments NPN transistor (e.g., TIP50C)

Please note that equivalent products might have slightly different specifications or packaging.

Specifications

Pbfree Code No Part Life Cycle Code Active
Pin Count 3 Reach Compliance Code compliant
ECCN Code EAR99 Factory Lead Time 34 Weeks
Case Connection COLLECTOR Collector Current-Max (IC) 5 A
Collector-Emitter Voltage-Max 60 V Configuration SINGLE
DC Current Gain-Min (hFE) 20 JESD-30 Code R-PSSO-F3
JESD-609 Code e3 Moisture Sensitivity Level 1
Number of Elements 1 Number of Terminals 3
Operating Temperature-Max 150 °C Peak Reflow Temperature (Cel) 260
Polarity/Channel Type NPN Power Dissipation-Max (Abs) 2.1 W
Qualification Status Not Qualified Surface Mount YES
Terminal Finish MATTE TIN Terminal Form FLAT
Terminal Position SINGLE Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING Transistor Element Material SILICON
Transition Frequency-Nom (fT) 130 MHz Package/Case SOT-89-3

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