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See Technical Specifications

TSM210N02CX +BOM

N-Channel Transistor MOSFET in SOT-23 package, ideal for power control

Manufacturer:

Taiwan Semiconductor
Mfr.Part #:

TSM210N02CX
Datasheet:

TSM210N02CX Datasheet (PDF)
FET Type:

N-Channel
Technology:

MOSFET (Metal Oxide)
Drain To Source Voltage (Vdss):

20 V
Current - Continuous Drain (Id) @ 25°C:

6.7A (Tc)
EDA/CAD Models:

Request Free CAD Models for TSM210N02CX

TSM210N02CX Information

Avaq Semiconductor offers the highly versatile and reliable TSM210N02CX driver, produced by Taiwan Semiconductor. With its multifunctional and high-performance capabilities, this component is an excellent choice for a wide range of electronic projects.

To ensure that you have all the necessary information to make the most of this component, Avaq provides a free datasheet PDF, as well as circuit diagrams, pin layouts, pin details, pin voltage ratings, and equivalent components for the TSM210N02CX.

Avaq also offers free samples. Simply fill out and submit the sample request form to receive your free samples for testing. If you have any questions, please feel free to contact us at any time.

Specifications

FET Type	N-Channel	Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	20 V	Current - Continuous Drain (Id) @ 25°C	6.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	1.8V, 4.5V	Rds On (Max) @ Id, Vgs	21mOhm @ 4A, 4.5V
Vgs(th) (Max) @ Id	0.8V @ 250µA	Gate Charge (Qg) (Max) @ Vgs	5.8 nC @ 4.5 V
Vgs (Max)	±10V	Input Capacitance (Ciss) (Max) @ Vds	600 pF @ 10 V
Power Dissipation (Max)	1.56W (Tc)	Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount	Base Product Number	TSM210
Package/Case	SOT-23-3