Description

The Texas Instruments TPS7H3301HKR/EM is a radiation-hardened, low-dropout (LDO) regulator designed for DDR termination applications in space and aerospace systems. It features a wide input voltage range of 2.3V to 3.5V, with the ability to sink and source up to 3A of current. This device is qualified to total ionizing dose (TID) 100 krad(Si) and immune to single event effects such as latch-up, gate rupture, burnout, transient, functional interrupt, and upset. It also includes features like undervoltage lockout and overcurrent limit for safe operation. The TPS7H3301HKR/EM is suitable for use in DDR termination applications, including DDR, DDR2, DDR3, DDR3L, and DDR4. Its radiation-hardened design makes it an ideal choice for space and aerospace systems where reliability and radiation tolerance are critical.

Features

According to the product information, the features of TPS7H3301HKR/EM are:

• Radiation hardness assurance (RHA) qualified to total ionizing dose (TID) 100 krad(Si)
• Immune to single event latch-up (SEL), single event gate rupture (SEGR), and single event burnout (SEB)
• Supports DDR, DDR2, DDR3, DDR3L, and DDR4 termination applications
• Input voltage: supports a 2.5-V and 3.3-V rail
• Separate low-voltage input (VLDOIN) down to 0.9 V for improved power efficiency
• 3-A sink and source termination regulator with droop compensation
• Enable input and power-good output for power supply sequencing
• VTT termination regulator: output voltage range of 0.5-1.75V, 3-A sink and source current
• Integrated precision voltage divider network with sense input
• Remote sensing (VTTSNS)
• VTTREF buffered reference with ±15-mV accuracy and ±10-mA sink and source current
• Undervoltage lockout (UVLO) and overcurrent limit (OCL) functionality integrated

Package

The package type of TPS7H3301HKR/EM is CFP (HKR)-16.

Pinout

The TPS7H3301HKR/EM is a radiation-hardened, low-dropout (LDO) regulator from Texas Instruments. It has a pin count of 16 pins in a CFP (HKR)-16 package.

Here's a concise summary of the pin functions:

• VCC: Input voltage
• GND: Ground
• EN: Enable input
• PWRGD: Power-good output
• VTTSNS: Remote sensing input
• VTTREF: VTT reference output
• VTT: Output voltage (0.5 to 1.75V)
• SINK/SOURCE: Sink and source termination regulator outputs
• VLDOIN: Low-voltage input for power efficiency

This device is designed for DDR memory termination applications in radiation-hardened environments, such as space or military systems.

Manufacturer

The manufacturer of the TPS7H3301HKR/EM is Texas Instruments (TI). TI is a leading semiconductor company that designs, manufactures, and tests semiconductors and related technologies. The company was founded in 1930 and is headquartered in Dallas, Texas. TI is a global leader in the development and manufacturing of analog and embedded processing semiconductors, and its products are used in a wide range of applications, including industrial automation, automotive electronics, medical devices, and more.

Applications

The TPS7H3301HKR/EM is suitable for applications that require radiation-hardened, high-reliability power management, such as:

• Aerospace and defense systems
• Medical devices and equipment
• High-reliability industrial control systems
• Space exploration and satellite systems

It provides a reliable and efficient power supply solution in harsh environments.

Equivalent

The equivalent products of TPS7H3301HKR/EM are:

• TPS7A3301
• TPS7A3302
• TPS7A3303
• TPS7A3304

These products offer similar radiation-hardened, low-dropout regulator (LDO) functionality for DDR termination applications.