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See Technical Specifications

TPN7R504PL,LQ +BOM

High-Performance N-Channel Power Transistor for Advanced Applicatio

Manufacturer:

Toshiba
Mfr.Part #:

TPN7R504PL,LQ
Datasheet:

TPN7R504PL,LQ Datasheet (PDF)
Technology:

Si
Mounting Style:

SMD/SMT
Transistor Polarity:

N-Channel
Number Of Channels:

1 Channel
EDA/CAD Models:

Request Free CAD Models for TPN7R504PL,LQ

TPN7R504PL,LQ Information

General Description

This MOSFET is ideal for a wide range of applications where high power dissipation and efficient switching are required. With a power dissipation of 610mW at a maximum ambient temperature, the TPN7R504PL,LQ is capable of operating reliably in demanding environments

Specifications

Product Category	MOSFET	Technology	Si
Mounting Style	SMD/SMT	Transistor Polarity	N-Channel
Number of Channels	1 Channel	Vds - Drain-Source Breakdown Voltage	40 V
Id - Continuous Drain Current	68 A	Rds On - Drain-Source Resistance	7.5 mOhms
Vgs - Gate-Source Voltage	- 20 V, + 20 V	Vgs th - Gate-Source Threshold Voltage	1.4 V
Qg - Gate Charge	24 nC	Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 175 C	Pd - Power Dissipation	61 W
Channel Mode	Enhancement	Tradename	U-MOSIX-H
Configuration	Single	Fall Time	7.3 ns
Product Type	MOSFET	Rise Time	5.6 ns
Factory Pack Quantity	3000	Subcategory	MOSFETs
Transistor Type	1 N-Channel	Typical Turn-Off Delay Time	25 ns
Typical Turn-On Delay Time	14 ns	Unit Weight	0.000705 oz
Package/Case	TSON-8