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TPHR9203PL1 +BOM

Trans MOSFET N-CH Si 30V 320A

Toshiba Semiconductor Inventory

Key Features

  • Characteristics
  • Symbol
  • Condition
  • Value
  • Unit
  • Gate threshold voltage (Max)
  • V
  • th
  • 2.1
  • V
  • Drain-Source on-resistance (Max)
  • R
  • DS(ON)
  • GS
  • 1.29
  • Drain-Source on-resistance (Max)
  • R
  • DS(ON)
  • GS
  • 0.92
  • Input capacitance (Typ.)
  • C
  • iss
  • 5800
  • pF
  • Total gate charge (Typ.)
  • Q
  • g
  • V
  • GS
  • 81
  • nC
Toshiba Semiconductor Original Stock

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TPHR9203PL1 Datasheet PDF

Preliminary Specification TPHR9203PL1 PDF Download

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