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TPD2E2U06QDCKRQ1 +BOM

Automotive Dual 1.5-pF, 5.5-V, ±25-kV ESD protection diode for USB & High Speed Interfaces

Manufacturer:

TI
Mfr.Part #:

TPD2E2U06QDCKRQ1
Datasheet:

TPD2E2U06QDCKRQ1 Datasheet (PDF)
Series: TPD2E2U06-Q1
Vrwm (V):

5.5
Bi-/uni-directional:

Uni-Directional
Number Of Channels:

2
EDA/CAD Models:

Request Free CAD Models for TPD2E2U06QDCKRQ1

TPD2E2U06QDCKRQ1 Information

Description

The Texas Instruments TPD2E2U06QDCKRQ1 is a surface-mount electrostatic discharge (ESD) protection device designed for high-speed data lines in industrial, automotive, and consumer applications. It provides robust ESD protection against electrical overstress (EOS) and electromagnetic interference (EMI). This device features AEC-Q101 qualification, making it suitable for automotive applications. Its small package size (SC-70-3) and low leakage current make it ideal for space-constrained designs. The TPD2E2U06QDCKRQ1 offers high ESD protection levels, including ±25-kV contact discharge and ±30-kV air-gap discharge, as well as ISO 10605-compliant ESD protection. It also features a low ESD clamping voltage and operates over an industrial temperature range of -40°C to +125°C. This device is suitable for protecting high-speed data lines in various applications, including automotive, industrial, and consumer electronics.

Features

According to the product information, the features of TPD2E2U06QDCKRQ1 are:

AEC-Q101 qualified
IEC 61000-4-2 Level 4 ESD protection:
+ ±25-kV (contact discharge)
+ ±30-kV (air-gap discharge)
ISO 10605 (330 pF, 330 Ω) ESD protection:
+ ±20-kV (contact discharge)
+ ±25-kV (air-gap discharge)
IO capacitance: 1.5-pF (typical)
DC breakdown voltage: 6.5 V (minimum)
Ultra-low leakage current: 10-nA (maximum)
Low ESD clamping voltage
Industrial temperature range: –40°C to +125°C
Small easy-to-route DBZ and DCK packages

Package

The package type of TPD2E2U06QDCKRQ1 is SOT23 (3-Pin) - DCK0003A.

Manufacturer

The manufacturer of the TPD2E2U06QDCKRQ1 is Texas Instruments (TI). Texas Instruments is a leading semiconductor company that designs, manufactures, and tests semiconductors and related technologies. The company was founded in 1930 and is headquartered in Dallas, Texas, USA. TI is a global leader in the development of analog and embedded processing technologies, with a wide range of products used in various industries such as automotive, industrial, medical, and consumer electronics.

Equivalent

Based on the features and specifications, equivalent products to TPD2E2U06QDCKRQ1 could be:

STMicroelectronics TVS diodes (e.g., SMBJ6.5A-C3)
ON Semiconductor TVS diodes (e.g., P6KE6.5CA)
Vishay Semiconductors TVS diodes (e.g., 54VZ6.5A)

These products offer similar ESD protection, surge protection, and voltage ratings as the TPD2E2U06QDCKRQ1. However, please note that exact equivalent products may vary depending on specific application requirements.

Specifications

Vrwm (V)	5.5	Bi-/uni-directional	Uni-Directional
Number of channels	2	Clamping voltage (V)	9.7
IO capacitance (typ) (pF)	1.5	IEC 61000-4-5 (A)	5.5
IEC 61000-4-2 contact (±V)	25000	Dynamic resistance (typ)	0.6
Interface type	Ethernet, General purpose, LVDS, USB 2.0	Breakdown voltage (min) (V)	6.5
IO leakage current (max) (nA)	10	Rating	Automotive
Operating temperature range (°C)	-40 to 125	Package/Case	SC-70-3