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TN0610N3-G-P003 +BOM

N-channel enhancement-mode transistor with low Rds(on)

TN0610N3-G-P003 Information

General Description

This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown.Vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.

Key Features

    • Low threshold - 2.0V max.
    • High input impedance
    • Low input capacitance - 100pF typical
    • Fast switching speeds
    • Low on-resistance
    • Free from secondary breakdown
    • Low input and output leakage

Specifications

Product Category MOSFET Technology Si
Mounting Style Through Hole Transistor Polarity N-Channel
Number of Channels 1 Channel Vds - Drain-Source Breakdown Voltage 100 V
Id - Continuous Drain Current 500 mA Rds On - Drain-Source Resistance 15 Ohms
Vgs - Gate-Source Voltage - 20 V, + 20 V Vgs th - Gate-Source Threshold Voltage 600 mV
Minimum Operating Temperature - 55 C Maximum Operating Temperature + 150 C
Pd - Power Dissipation 1 W Channel Mode Enhancement
Configuration Single Fall Time 16 ns
Height 5.33 mm Length 5.21 mm
Product MOSFET Small Signals Product Type MOSFET
Rise Time 14 ns Factory Pack Quantity 2000
Subcategory MOSFETs Transistor Type 1 N-Channel
Typical Turn-Off Delay Time 16 ns Typical Turn-On Delay Time 6 ns
Width 4.19 mm Unit Weight 0.016000 oz
Package/Case TO-92-3

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