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N-channel enhancement-mode transistor with low Rds(on)
TO-92-3Manufacturer:
Microchip Technology
Mfr.Part #:
TN0610N3-G-P003
Datasheet:
Technology:
Si
Mounting Style:
Through Hole
Transistor Polarity:
N-Channel
Number Of Channels:
1 Channel
EDA/CAD Models:
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This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown.Vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.
Product Category | MOSFET | Technology | Si |
Mounting Style | Through Hole | Transistor Polarity | N-Channel |
Number of Channels | 1 Channel | Vds - Drain-Source Breakdown Voltage | 100 V |
Id - Continuous Drain Current | 500 mA | Rds On - Drain-Source Resistance | 15 Ohms |
Vgs - Gate-Source Voltage | - 20 V, + 20 V | Vgs th - Gate-Source Threshold Voltage | 600 mV |
Minimum Operating Temperature | - 55 C | Maximum Operating Temperature | + 150 C |
Pd - Power Dissipation | 1 W | Channel Mode | Enhancement |
Configuration | Single | Fall Time | 16 ns |
Height | 5.33 mm | Length | 5.21 mm |
Product | MOSFET Small Signals | Product Type | MOSFET |
Rise Time | 14 ns | Factory Pack Quantity | 2000 |
Subcategory | MOSFETs | Transistor Type | 1 N-Channel |
Typical Turn-Off Delay Time | 16 ns | Typical Turn-On Delay Time | 6 ns |
Width | 4.19 mm | Unit Weight | 0.016000 oz |
Package/Case | TO-92-3 |
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Qty. | Unit Price | Ext. Price |
---|---|---|
1000+ | $0.413 | $413.00 |
500+ | $0.420 | $210.00 |
200+ | $0.436 | $87.20 |
1+ | $1.126 | $1.13 |
The prices above are for reference only.