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TK40A06N1 +BOM

N-Channel MOSFET Transistor

Manufacturer:

Toshiba Semiconductor
Mfr.Part #:

TK40A06N1
Datasheet:

TK40A06N1 Datasheet (PDF)
FET Type:

N-Channel
Technology:

MOSFET (Metal Oxide)
Drain To Source Voltage (Vdss):

60 V
Current - Continuous Drain (Id) @ 25°C:

40A (Tc)
EDA/CAD Models:

Request Free CAD Models for TK40A06N1

TK40A06N1 Information

Description

The Toshiba TK40A06N1 is an N-Channel MOSFET Transistor, a type of power electronic component. It's designed for use in various applications where high voltage and current handling are required. The introduction to this product would typically cover its key characteristics, such as:

High voltage rating: The TK40A06N1 can handle voltages up to 600V.
High current rating: It can handle currents up to 40A.
Low on-resistance: This allows for efficient switching and reduced power loss.

The introduction would also highlight the product's benefits, such as its compact size, high reliability, and suitability for use in a wide range of applications, including motor control, power supplies, and renewable energy systems. Overall, the TK40A06N1 is a versatile and reliable component that can help designers and engineers create efficient and effective electronic systems.

Manufacturer

The manufacturer of the TK40A06N1 is Toshiba, a Japanese multinational conglomerate corporation that specializes in electronics and electrical systems.

Equivalent

Based on the product information, I found that TK40A06N1 is an N-Channel MOSFET Transistor from Toshiba. To find equivalent products, I searched for similar MOSFETs with similar specifications. Some possible equivalent products are:

STP16NF60
IRF640
FQP50N06L

Please note that these are just suggestions and may not be exact equivalents.

Specifications

Category	Discrete Semiconductor ProductsTransistorsFETs, MOSFETsSingle FETs, MOSFETs	FET Type	N-Channel
Technology	MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss)	60 V
Current - Continuous Drain (Id) @ 25°C	40A (Tc)	Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	10.4mOhm @ 20A, 10V	Vgs(th) (Max) @ Id	4V @ 300µA
Gate Charge (Qg) (Max) @ Vgs	23 nC @ 10 V	Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	1700 pF @ 30 V	FET Feature	-
Power Dissipation (Max)	30W (Tc)	Operating Temperature	150°C (TJ)
Mounting Type	Through Hole	Base Product Number	TK40A06
Package/Case	TO-220F