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TK20N60W,S1VF +BOM

N-Channel 600 V 20A (Ta) 165W (Tc) Through Hole TO-247

TK20N60W,S1VF General Description

N-Channel 600 V 20A (Ta) 165W (Tc) Through Hole TO-247

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Specifications

Product Category MOSFET Technology Si
Mounting Style Through Hole Transistor Polarity N-Channel
Number of Channels 1 Channel Vds - Drain-Source Breakdown Voltage 600 V
Id - Continuous Drain Current 20 A Rds On - Drain-Source Resistance 130 mOhms
Vgs - Gate-Source Voltage - 30 V, + 30 V Vgs th - Gate-Source Threshold Voltage 3.7 V
Qg - Gate Charge 48 nC Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C Pd - Power Dissipation 165 W
Channel Mode Enhancement Tradename DTMOSIV
Series TK20N60W Configuration Single
Fall Time 6 ns Height 20.95 mm
Length 15.94 mm Product Type MOSFET
Rise Time 25 ns Factory Pack Quantity 30
Subcategory MOSFETs Transistor Type 1 N-Channel
Typical Turn-Off Delay Time 100 ns Typical Turn-On Delay Time 50 ns
Width 5.02 mm Unit Weight 0.211644 oz
Package/Case TO-247-3

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