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TK11S10N1L,LQ +BOM

MOSFET 65W 1MHz Automotive; AEC-Q101

TK11S10N1L,LQ Information

General Description

N-Channel 100 V 11A (Ta) 65W (Tc) Surface Mount DPAK+

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Specifications

Product Category MOSFET Technology Si
Mounting Style SMD/SMT Transistor Polarity N-Channel
Number of Channels 1 Channel Vds - Drain-Source Breakdown Voltage 100 V
Id - Continuous Drain Current 11 A Rds On - Drain-Source Resistance 28 mOhms
Vgs - Gate-Source Voltage - 20 V, + 20 V Vgs th - Gate-Source Threshold Voltage 1.5 V
Qg - Gate Charge 15 nC Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 175 C Pd - Power Dissipation 65 W
Channel Mode Enhancement Qualification AEC-Q101
Tradename U-MOSVIII-H Series TK11S10N1L
Configuration Single Fall Time 8 ns
Product Type MOSFET Rise Time 13 ns
Factory Pack Quantity 2000 Subcategory MOSFETs
Transistor Type 1 N-Channel Typical Turn-Off Delay Time 36 ns
Typical Turn-On Delay Time 29 ns Unit Weight 0.012699 oz
Package/Case TO-252-3

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