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TK110N65Z,S1F +BOM

MOSFET MOSFET 650V 110mOhms DTMOS-VI

TK110N65Z,S1F General Description

N-Channel 650 V 24A (Ta) 190W (Tc) Through Hole TO-247

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Specifications

Product Category MOSFET Technology Si
Mounting Style Through Hole Transistor Polarity N-Channel
Number of Channels 1 Channel Vds - Drain-Source Breakdown Voltage 650 V
Id - Continuous Drain Current 24 A Rds On - Drain-Source Resistance 110 mOhms
Vgs - Gate-Source Voltage - 30 V, + 30 V Vgs th - Gate-Source Threshold Voltage 4 V
Qg - Gate Charge 40 nC Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C Pd - Power Dissipation 190 W
Channel Mode Enhancement Series DTMOS VI
Fall Time 4 ns Product Type MOSFET
Rise Time 35 ns Factory Pack Quantity 30
Subcategory MOSFETs Transistor Type 1 N-Channel
Typical Turn-Off Delay Time 90 ns Typical Turn-On Delay Time 62 ns
Unit Weight 0.211644 oz Package/Case TO-247-3

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