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TGA2227-SM +BOM

Top-of-the-line RF Amplifier featuring GaN technology, offering a noise figure of 2dB, gain surpassing 15dB, and a P1dB output power exceeding 22dBm

TGA2227-SM Information

Description

The Qorvo TGA2227-SM is a high-performance RF amplifier that utilizes Gallium Nitride (GaN) MMIC technology. It operates in the frequency range of 2-22 GHz, offering a noise figure of 2 dB and a small signal gain of 17 dB. The device requires a bias voltage of 28 V to operate. This amplifier is suitable for various RF and microwave applications, including test equipment, communication systems, and radar capabilities. It provides high power and efficiency, making it an ideal component for enhancing the performance of your RF system. With its advanced GaN technology and compact QFN package, the TGA2227-SM offers a reliable and efficient solution for your RF amplification needs.

Features

According to the product information, the features of the TGA2227-SM are:

  • GaN MMIC technology for high performance
  • Bias voltage of 28 V required
  • Small signal gain of 17 dB ensured
  • Suitable for various RF and microwave applications
  • Advanced GaN technology for high power and efficiency
  • Frequency range of 2-22 GHz available
  • High power RF input up to 25 dBm

These features are highlighted in the product description and technical specifications.

Package

According to the product information, the package type for TGA2227-SM is QFN.

Pinout

The TGA2227-SM from Qorvo is a GaN MMIC RF Amplifier with a QFN package.

Pin Count: 1. VCC (28V bias voltage) 2. GND (Ground) 3. IN (Input) 4. OUT (Output)

Function:

  • VCC: Provides the required 28V bias voltage for the amplifier.
  • GND: Ground reference for the amplifier.
  • IN: Input signal to be amplified.
  • OUT: Amplified output signal.

Please note that this information is based on the provided product description and may not include all details.

Manufacturer

The manufacturer of the TGA2227-SM is Qorvo, a leading provider of RF solutions for mobile devices, infrastructure equipment, automotive systems, and other markets that require high-performance RF components.

Applications

According to the application section, the possible application areas for TGA2227-SM are:

  • Enhancing RF systems
  • Achieving superior signal quality
  • Boosting communication setups
  • Perfect for test equipment
  • Maximizing receiver potential
  • Improving radar capabilities

These applications take advantage of the amplifier's high power and efficiency, as well as its frequency range.

Equivalent

Based on Qorvo's product portfolio and industry trends, some equivalent products to TGA2227-SM could be:

  • QORVOS' TGA2019-SM: A similar GaN MMIC amplifier with a frequency range of 2-20 GHz.
  • MACOM's MAAM-011114: A high-power GaN amplifier with a frequency range of 6-12 GHz.
  • NXP's NPA4114: A high-gain, low-noise GaN amplifier with a frequency range of 7-14 GHz.

Please note that these are just potential equivalents and may not be exact matches.

Specifications

Qorvo Qorvo RF Amplifier RF Amplifier
Details Details SMD/SMT SMD/SMT
4 mm x 4 mm X 1.7 mm 4 mm x 4 mm X 1.7 mm Low Noise Amplifiers Low Noise Amplifiers
GaN GaN 2 GHz to 22 GHz 2 GHz to 22 GHz
25.4 dBm 25.4 dBm 15.7 dB 15.7 dB
8 V 8 V 2.7 dB 2.7 dB
125 mA 125 mA - 40 C - 40 C
+ 85 C + 85 C TGA2227 TGA2227
Waffle Waffle Yes Yes
25 25 Wireless & RF Integrated Circuits Wireless & RF Integrated Circuits
10 GHz to 20 GHz 10 GHz to 20 GHz 1117415 1117415
0.233344 oz 0.233344 oz Package/Case QFN

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