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TF412ST5G +BOM

N-Channel JFET, 30 V, 1.2 to 3.0 mA, 5.0 mS, SOT-883

Manufacturer:

ON Semiconductor, LLC
Mfr.Part #:

TF412ST5G
Datasheet:

TF412ST5G Datasheet (PDF)
Case Outline:

506CB
MSL Temp (°C):

260
Container Type:

REEL
FET Type:

N-Channel
EDA/CAD Models:

Request Free CAD Models for TF412ST5G

TF412ST5G Information

Description

The onsemi TF412ST5G is a low-noise, high-performance N-channel JFET transistor in a tiny SOT-883 package. It features extremely low input current (IGSS) of 1.0nA maximum, making it suitable for low-frequency general-purpose amplifier applications, impedance conversion, and infrared sensor applications. The device has a low drain-source saturation current (IDSS) of 1.2-3.0mA, allowing for efficient operation in various circuits. Its ultrasmall package size facilitates miniaturization in end products, making it an ideal choice for space-constrained designs. Additionally, the TF412ST5G is halogen-free compliant, ensuring a more environmentally friendly solution.

Features

The TF412ST5G features:

Low IGSS of 1.0nA MAX
Low IDSS of 1.2-3.0mA
Ultrasmall package for miniaturization in end products
Halogen-free compliance
These features make it suitable for applications such as:
Low-Frequency General-Purpose Amplifier
Impedance Conversion
Infrared Sensor Applications

Package

The package type of TF412ST5G is SOT-883 (3-XFDFN).

Pinout

The TF412ST5G has a 3-pin package (SOT-883) with the following functions:

Pin 1: Drain (D)
Pin 2: Source (S)
Pin 3: Gate (G)

This is a N-channel JFET transistor, suitable for low-frequency general-purpose amplifier applications, impedance conversion, and infrared sensor applications.

Manufacturer

The manufacturer of the TF412ST5G is ON Semiconductor, a leading global semiconductor company that designs, manufactures, and supplies power management, analog, sensors, logic, timing, and connectivity solutions for various industries.

Applications

The TF412ST5G is a Trans JFET N-CH 30V 10mA 3-Pin SOT-883 T/R from ON Semiconductor, suitable for low-frequency general-purpose amplifier applications, impedance conversion, and infrared sensor applications. Its ultrasmall package facilitates miniaturization in end products.

Equivalent

Based on the product information, I would recommend the following equivalent products:

NXP Semiconductors - BSS84 (similar specifications)
STMicroelectronics - VF2461 (comparable performance)
Texas Instruments - CCV2025 (matching characteristics)

Please note that these recommendations are based on a general analysis of the TF412ST5G product and may not be exact matches.

Specifications

Status	Active	Case Outline	506CB
MSL Temp (°C)	260	Container Type	REEL
FET Type	N-Channel	Voltage - Breakdown (V(BR)GSS)	30 V
Drain to Source Voltage (Vdss)	30 V	Current - Drain (Idss) @ Vds (Vgs=0)	1.2 mA @ 10 V
Current Drain (Id) - Max	10 mA	Voltage - Cutoff (VGS off) @ Id	180 mV @ 1 µA
Input Capacitance (Ciss) (Max) @ Vds	4pF @ 10V	Power - Max	100 mW
Operating Temperature	150°C (TJ)	Mounting Type	Surface Mount
Base Product Number	TF412	Package/Case	SOT-883