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STP100N6F7 +BOM

N-channel 60 V, 4.7 mOhm typ., 100 A STripFET F7 Power MOSFET in a TO-220 package

Manufacturer:

ST
Mfr.Part #:

STP100N6F7
Datasheet:

STP100N6F7 Datasheet (PDF)
Part Life Cycle Code:

Active
Reach Compliance Code:

not_compliant
ECCN Code:

EAR99
Factory Lead Time:

52 Weeks
EDA/CAD Models:

Request Free CAD Models for STP100N6F7

STP100N6F7 Information

Description

The STP100N6F7 is an N-channel Power MOSFET from STMicroelectronics, designed for high-power applications. It features a low RDS(on) of 4.7 mOhm, making it suitable for demanding power management tasks. The device has excellent figure of merit (FoM), which indicates its efficiency and performance. The STP100N6F7 is packaged in a TO-220 format, with a height of 4.6mm. Its key features include low RDS(on) for reduced energy losses, high avalanche ruggedness for improved reliability, and a low Crss/Ciss ratio for enhanced EMI immunity. This Power MOSFET is suitable for applications such as DC-DC converters, motor drives, and power supplies, where high current handling and efficient switching are required. Its compact package and robust performance make it an attractive option for designers seeking to minimize board space while maximizing system efficiency.

Features

According to the product information, the features of STP100N6F7 are:

Among the lowest RDS(on) on the market
Excellent figure of merit (FoM)
Low Crss/Ciss ratio for EMI immunity
High avalanche ruggedness

These features make it a suitable power MOSFET for various applications.

Package

The package type of STP100N6F7 is TO-220, specifically Transistor Outline, Vertical with a height of 4.6mm.

Pinout

According to the provided product information, the STP100N6F7 Power MOSFET comes in a TO-220 package, which typically has three pins: Drain (D), Source (S), and Gate (G). The pin-out function is:

Pin 1: Drain (D)
Pin 2: Source (S)
Pin 3: Gate (G)

These pins are commonly found on Power MOSFETs in the TO-220 package, allowing for the control of high current flows.

Manufacturer

The manufacturer of the STP100N6F7 is STMicroelectronics, a semiconductor corporation.

Applications

The STP100N6F7 Power MOSFET is suitable for various applications, including:

DC-DC converters
Motor drives
Power supplies
Automotive systems (e.g., battery chargers, motor control)
Industrial power conversion
Aerospace and defense systems

Its high current handling and low RDS(on) make it an excellent choice for demanding power management applications.

Equivalent

Based on the product information, STP100N6F7 is a Power MOSFET from STMicroelectronics. Equivalent products can be found by searching for similar specifications:

Infineon: IPS150N06L
ON Semiconductor: NTHB5010L
Texas Instruments: UCC28051A

Please note that equivalent products may have slightly different specifications or packaging, but they share similar characteristics and applications as the STP100N6F7.

Specifications

Source Content uid	STP100N6F7	Part Life Cycle Code	Active
Reach Compliance Code	not_compliant	ECCN Code	EAR99
Factory Lead Time	52 Weeks	Avalanche Energy Rating (Eas)	200 mJ
Case Connection	DRAIN	Configuration	SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min	60 V	Drain Current-Max (ID)	100 A
Drain-source On Resistance-Max	0.0056 Ω	FET Technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code	TO-220AB	JESD-30 Code	R-PSFM-T3
Number of Elements	1	Number of Terminals	3
Operating Mode	ENHANCEMENT MODE	Operating Temperature-Min	-55 °C
Peak Reflow Temperature (Cel)	NOT SPECIFIED	Polarity/Channel Type	N-CHANNEL
Pulsed Drain Current-Max (IDM)	400 A	Surface Mount	NO
Terminal Form	THROUGH-HOLE	Terminal Position	SINGLE
Time@Peak Reflow Temperature-Max (s)	NOT SPECIFIED	Transistor Application	SWITCHING
Transistor Element Material	SILICON	Package/Case	TO-220