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STD12N65M2 +BOM

Efficient power switching device with rugged design, suitable for harsh environments

STD12N65M2 Information

General Description

This device is an N-channel Power MOSFET developed using MDmesh™ M2 technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficiency converters.

Key Features

  • Extremely low gate charge
  • Excellent output capacitance (COSS) profile
  • 100% avalanche tested
  • Zener-protected

Specifications

ECCN US EAR99 ECCN EU NEC
Packing Type Tape And Reel Grade Industrial
Package/Case DPAK-3

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Returns and exchanges are supported, provided the items remain in their original condition.

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