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STD12N65M2 +BOM
Efficient power switching device with rugged design, suitable for harsh environments
DPAK-3-
Manufacturer:
STMicroelectronics NV
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Mfr.Part #:
STD12N65M2
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Datasheet:
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ECCN US:
EAR99
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ECCN EU:
NEC
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Packing Type:
Tape And Reel
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Grade:
Industrial
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EDA/CAD Models:
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Availability: 5458 PCS
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STD12N65M2 Information
General Description
This device is an N-channel Power MOSFET developed using MDmesh™ M2 technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficiency converters.
Key Features
- Extremely low gate charge
- Excellent output capacitance (COSS) profile
- 100% avalanche tested
- Zener-protected
Specifications
ECCN US | EAR99 | ECCN EU | NEC |
Packing Type | Tape And Reel | Grade | Industrial |
Package/Case | DPAK-3 |
Service Policies and Others
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In Stock: 5,458
Minimum Order: 1
Qty. | Unit Price | Ext. Price |
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1+ | - | - |
The prices above are for reference only.