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See Technical Specifications

STD100N3LF3 +BOM

N-CHANNEL 30V - 0.0045Ohm - 80A - DPAK - IPAK

Manufacturer:

STMicroelectronics, Inc
Mfr.Part #:

STD100N3LF3
Datasheet:

STD100N3LF3 Datasheet (PDF)
Series: STD100N3LF3
FET Type:

N-Channel
Technology:

MOSFET (Metal Oxide)
Drain To Source Voltage (Vdss):

30 V
EDA/CAD Models:

Request Free CAD Models for STD100N3LF3

STD100N3LF3 Information

General Description

This STripFET II Power MOSFET technology is among the latest improvements, which have been especially tailored to minimize on-state resistance providing superior switching performance.

Key Features

High-speed switching capability
Precise temperature control required
Fully compatible with IEC 60947-4

Specifications

Category	Discrete Semiconductor ProductsTransistorsFETs, MOSFETsSingle FETs, MOSFETs	FET Type	N-Channel
Technology	MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss)	30 V
Current - Continuous Drain (Id) @ 25°C	80A (Tc)	Drive Voltage (Max Rds On, Min Rds On)	5V, 10V
Rds On (Max) @ Id, Vgs	5.5mOhm @ 40A, 10V	Vgs(th) (Max) @ Id	2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	27 nC @ 5 V	Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	2060 pF @ 25 V	FET Feature	-
Power Dissipation (Max)	110W (Tc)	Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount	Base Product Number	STD100
Package/Case	TO-252-3