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STB33N65M2 +BOM

Efficient power conversion with MDmesh M2 technology

STB33N65M2 Information

General Description

These devices are N-channel Power MOSFETs developed using MDmesh™ M2 technology. Thanks to their strip layout and improved vertical structure, the devices exhibit low on-resistance and optimized switching characteristics, rendering them suitable for the most demanding high efficiency converters.

Key Features

  • Extremely low gate charge
  • Excellent output capacitance (Coss) profile
  • 100% avalanche tested
  • Zener-protected

Specifications

ECCN US EAR99 ECCN EU NEC
Packing Type Tape And Reel Grade Industrial
Package/Case D2PAK

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Returns and exchanges are supported, provided the items remain in their original condition.

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