Payment Method
SSM6N35FE +BOM
Trans MOSFET N-CH Si 20V 0.18A 6-Pin ES
SOT-563-
Manufacturer:
-
Mfr.Part #:
SSM6N35FE
-
Datasheet:
-
Technology:
MOSFET (Metal Oxide)
-
Configuration:
2 N-Channel (Dual)
-
FET Feature:
Logic Level Gate
-
Drain To Source Voltage (Vdss):
20V
-
EDA/CAD Models:
Send all BOMs to [email protected], or fill out the form below for a quote on SSM6N35FE. Guaranteed response within 12hr.
Availability: 6403 PCS
Please fill in the short form below and we will provide you the quotation immediately.
SSM6N35FE General Description
SSM6N35FE is a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) from Toshiba, a renowned leader in the semiconductor industry. This device belongs to the power MOSFET family, specifically designed for high-frequency and high-voltage applications. With its innovative ES-6 package, SSM6N35FE offers excellent thermal performance and reliable operation. This power MOSFET is designed to handle demanding tasks such as motor control, switch-mode power supplies, and load switching. Its compact size and low saturation voltage make it an ideal choice for modern electronic systems that require efficient energy conversion and high-speed switching capabilities.
Key Features
- Drain-source breakdown voltage: 35V
- Gate threshold voltage: 5V
- Drain current at 25°C: 15A
- Operating temperature range: -40°C to 150°C
- RoHS compliant
Application
- Motor control systems for industrial automation and robotics
- High-frequency power supplies for telecommunications and computing
- Load switching and bypass applications in automotive and aerospace industries
- Renewable energy systems, such as solar and wind power generation
Specifications
Category | Discrete Semiconductor ProductsTransistorsFETs, MOSFETsFET, MOSFET Arrays | Series | - |
Technology | MOSFET (Metal Oxide) | Configuration | 2 N-Channel (Dual) |
FET Feature | Logic Level Gate | Drain to Source Voltage (Vdss) | 20V |
Current - Continuous Drain (Id) @ 25°C | 180mA | Rds On (Max) @ Id, Vgs | 3Ohm @ 50mA, 4V |
Vgs(th) (Max) @ Id | 1V @ 1mA | Gate Charge (Qg) (Max) @ Vgs | - |
Input Capacitance (Ciss) (Max) @ Vds | 9.5pF @ 3V | Power - Max | 150mW |
Operating Temperature | 150°C (TJ) | Mounting Type | Surface Mount |
Base Product Number | SSM6N35 | Product Category | Toshiba |
Package/Case | SOT-563 |
Service Policies and Others
After-Sales & Settlement Related
For alternative payment channels, please reach out to us at:
[email protected]Shipping Method
AVAQ determines and packages all devices based on electrostatic discharge (ESD) and moisture sensitivity level (MSL) protection requirements.
365-Day Product
Quality Guarantee
We promise to provide 365 days quality assurance service for all our products.
SSM6N35FE Datasheet PDF
SSM6N35FE PDF Preview
In Stock: 6,403
Minimum Order: 1
Qty. | Unit Price | Ext. Price |
---|---|---|
1+ | - | - |
The prices below are for reference only.
Top Sellers
-
TB6612FNG
Toshiba
Motor driver chip for brushed motors
-
2SC5198
Toshiba
Power transistor for high-speed switching applications
-
2SA1941
Toshiba
High-power switching transistor for demanding applicatio
-
TTA1943
Toshiba
High-performance audio transistor for demanding application
-
THGBMFG7C2LBAIL
Toshiba
NAND Flash Serial e-MMC 3.3V 16G-bit 153-Pin FBGA
Good company, Ronnie is great.