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Transistor MOSFET P-channel Silicon 30V 4A 3-pin SOT-23F Tape and Reel
SOT-23FManufacturer:
Mfr.Part #:
SSM3J334R
Datasheet:
Series: SSM3J334R
FET Type:
P-Channel
Technology:
MOSFET (Metal Oxide)
Drain To Source Voltage (Vdss):
30 V
EDA/CAD Models:
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The Toshiba America Electronic Components' SSM3J334R is a Pulse-Width Modulation (PWM) Power MOSFET designed for portable electronic devices, tablets, smartphones, digital cameras, and gaming consoles. This Trans MOSFET offers low on-state resistance, input capacitance, and fast switching speed, making it suitable for applications requiring high current capability and low power consumption. The SOT23 package is one of the smallest surface-mount packages available, ideal for space-constrained designs. The part also features a low gate threshold voltage, which enables efficient and reliable operation. Overall, the SSM3J334R is an excellent choice for designers seeking a high-performance, low-power solution with minimal footprint requirements.
Based on the product information, the features of SSM3J334R are:
These features make it suitable for use in portable electronic devices such as tablets, smartphones, digital cameras, and gaming consoles.
The package type of SSM3J334R is SOT23.
The manufacturer of the SSM3J334R is Toshiba America Electronic Components, which is a subsidiary of Toshiba Corporation. Toshiba America Electronic Components is a leading supplier of electronic components, including semiconductors, power devices, and discrete devices. The company provides a wide range of products for various industries, such as consumer electronics, automotive, industrial equipment, and more.
According to the product information, the application areas of SSM3J334R are:
Based on the features and applications, equivalent products of SSM3J334R could be:
These devices share similar parameters such as voltage ratings, current capabilities, and package types with the SSM3J334R. However, for an exact match, please consult Toshiba's datasheet or contact their sales team for more information.
Category | Discrete Semiconductor ProductsTransistorsFETs, MOSFETsSingle FETs, MOSFETs | FET Type | P-Channel |
Technology | MOSFET (Metal Oxide) | Drain to Source Voltage (Vdss) | 30 V |
Current - Continuous Drain (Id) @ 25°C | 4A (Ta) | Drive Voltage (Max Rds On, Min Rds On) | 4V, 10V |
Rds On (Max) @ Id, Vgs | 71mOhm @ 3A, 10V | Vgs(th) (Max) @ Id | 2V @ 100µA |
Gate Charge (Qg) (Max) @ Vgs | 5.9 nC @ 10 V | Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 280 pF @ 15 V | FET Feature | - |
Power Dissipation (Max) | 1W (Ta) | Operating Temperature | 150°C (TJ) |
Mounting Type | Surface Mount | Base Product Number | SSM3J334 |
Package/Case | SOT-23F |
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Thank you. Order received. The quality is excellent. Corresponds to the description completely.