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SS8050-D-BP

Bipolar (BJT) Transistor NPN 25 V 1.5 A 190MHz 1 W Through Hole TO-92

SS8050-D-BP General Description

Bipolar (BJT) Transistor NPN 25 V 1.5 A 190MHz 1 W Through Hole TO-92

Specifications

Series - Transistor Type NPN
Current - Collector (Ic) (Max) 1.5 A Voltage - Collector Emitter Breakdown (Max) 25 V
Vce Saturation (Max) @ Ib, Ic 500mV @ 80mA, 800mA Current - Collector Cutoff (Max) 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce 160 @ 100mA, 1V Power - Max 1 W
Frequency - Transition 190MHz Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole Base Product Number SS8050

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Availability: 8300 PCS

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