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SQM70060EL_GE3 +BOM

High-power switching solution for automotive applications

SQM70060EL_GE3 Information

TrenchFET® power MOSFET

Package with low thermal resistance

AEC-Q101 qualified

100 % Rg and UIS tested

Product Category	MOSFET	REACH	Details
Technology	Si	Mounting Style	SMD/SMT
Transistor Polarity	N-Channel	Number of Channels	1 Channel
Vds - Drain-Source Breakdown Voltage	100 V	Id - Continuous Drain Current	75 A
Rds On - Drain-Source Resistance	4.6 mOhms	Vgs - Gate-Source Voltage	- 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage	1.5 V	Qg - Gate Charge	100 nC
Minimum Operating Temperature	- 55 C	Maximum Operating Temperature	+ 175 C
Pd - Power Dissipation	166 W	Channel Mode	Enhancement
Qualification	AEC-Q101	Tradename	TrenchFET
Configuration	Single	Fall Time	13 ns
Forward Transconductance - Min	95 S	Height	4.83 mm
Length	10.67 mm	Product Type	MOSFET
Rise Time	21 ns	Factory Pack Quantity	800
Subcategory	MOSFETs	Transistor Type	1 N-Channel
Typical Turn-Off Delay Time	34 ns	Typical Turn-On Delay Time	13 ns
Width	9.65 mm	Unit Weight	0.139332 oz
Package/Case	D2PAK-3