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SQJ168ELP-T1_GE3 Image
SQJ168ELP-T1_GE3 Image
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SQJ168ELP-T1_GE3

In Stock: 6,477

N-channel MOSFET for high-reliability applications.

SQJ168ELP-T1_GE3 Information

Vishay Inventory

Features

  • TrenchFET® power MOSFET
  • AEC-Q101 qualified
  • 100 % Rg and UIS tested
    • Vishay Inventory
    Vishay Inventory

    Specifications

    Product Category MOSFET Technology Si
    Mounting Style SMD/SMT Transistor Polarity N-Channel
    Number of Channels 1 Channel Vds - Drain-Source Breakdown Voltage 60 V
    Id - Continuous Drain Current 24 A Rds On - Drain-Source Resistance 32 mOhms
    Vgs - Gate-Source Voltage - 20 V, + 20 V Vgs th - Gate-Source Threshold Voltage 2.5 V
    Qg - Gate Charge 20 nC Minimum Operating Temperature - 55 C
    Maximum Operating Temperature + 175 C Pd - Power Dissipation 29.4 W
    Channel Mode Enhancement Configuration Single
    Fall Time 1 ns Forward Transconductance - Min 30 S
    Product Type MOSFET Rise Time 7 ns
    Factory Pack Quantity 3000 Subcategory MOSFETs
    Typical Turn-Off Delay Time 19 ns Typical Turn-On Delay Time 7 ns
    Package/Case SO-8

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    Reference Price（USD）

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    Quantity

    Unit Price

    Ext. Price

    1+

    $0.870

    $0.87

    200+

    $0.337

    $67.40

    500+

    $0.325

    $162.50

    1000+

    $0.319

    $319.00

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