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SQD90P04-9M4L_GE3 +BOM
Robust and compact DPAK package with tab for grounding
DPAK-3-
Manufacturer:
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Mfr.Part #:
SQD90P04-9M4L_GE3
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Datasheet:
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REACH:
Details
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Technology:
Si
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Mounting Style:
SMD/SMT
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Transistor Polarity:
P-Channel
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EDA/CAD Models:
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Availability: 7218 PCS
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SQD90P04-9M4L_GE3 Information
Key Features
Specifications
Product Category | MOSFET | REACH | Details |
Technology | Si | Mounting Style | SMD/SMT |
Transistor Polarity | P-Channel | Number of Channels | 1 Channel |
Vds - Drain-Source Breakdown Voltage | 40 V | Id - Continuous Drain Current | 90 A |
Rds On - Drain-Source Resistance | 7.5 mOhms | Vgs - Gate-Source Voltage | - 20 V, + 20 V |
Vgs th - Gate-Source Threshold Voltage | 2.5 V | Qg - Gate Charge | 155 nC |
Minimum Operating Temperature | - 55 C | Maximum Operating Temperature | + 175 C |
Pd - Power Dissipation | 136 W | Channel Mode | Enhancement |
Qualification | AEC-Q101 | Tradename | TrenchFET |
Configuration | Single | Fall Time | 19 ns |
Forward Transconductance - Min | 46 S | Product Type | MOSFET |
Rise Time | 15 ns | Factory Pack Quantity | 2000 |
Subcategory | MOSFETs | Transistor Type | 1 P-Channel |
Typical Turn-Off Delay Time | 61 ns | Typical Turn-On Delay Time | 13 ns |
Unit Weight | 0.011640 oz | Package/Case | DPAK-3 |
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In Stock: 7,218
Minimum Order: 1
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