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See Technical Specifications

SQ4184EY-T1-GE3 +BOM

Features low Quiescent Current (Iq) of just 250uA at 10V

SQ4184EY-T1-GE3 Information

TrenchFET® power MOSFET

AEC-Q101 qualified

100 % Rg and UIS tested

Product Category	MOSFET	Technology	Si
Mounting Style	SMD/SMT	Transistor Polarity	N-Channel
Number of Channels	1 Channel	Vds - Drain-Source Breakdown Voltage	40 V
Id - Continuous Drain Current	29 A	Rds On - Drain-Source Resistance	3.6 mOhms
Vgs - Gate-Source Voltage	- 20 V, + 20 V	Vgs th - Gate-Source Threshold Voltage	2.5 V
Qg - Gate Charge	110 nC	Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 175 C	Pd - Power Dissipation	7.1 W
Channel Mode	Enhancement	Qualification	AEC-Q101
Tradename	TrenchFET	Configuration	Single
Fall Time	15 ns	Forward Transconductance - Min	78 S
Height	1.75 mm	Length	4.9 mm
Product Type	MOSFET	Rise Time	30 ns
Factory Pack Quantity	2500	Subcategory	MOSFETs
Transistor Type	1 N-Channel	Typical Turn-Off Delay Time	43 ns
Typical Turn-On Delay Time	15 ns	Width	3.9 mm
Unit Weight	0.006596 oz	Package/Case	SOIC-8