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SQ3456BEV-T1-GE3 Image
SQ3456BEV-T1-GE3 Image
3d-img SQ3456BEV-T1-GE3 Image

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SQ3456BEV-T1-GE3

In Stock: 3,231

Advanced power electronics component for reliable operation

SQ3456BEV-T1-GE3 Information

Description

Introducing the SQ3456BEV-T1_GE3, a high-performance N-Channel Power MOSFET designed for various power electronic applications. This MOSFET has a voltage rating of 30V and can handle current up to 7.8A, making it suitable for a wide range of power requirements. With a low on-resistance of 35mOhm, this MOSFET ensures minimal power loss and efficient operation
Vishay Inventory

Features

  • Inrush Current Limitation
  • Soft Start Feature
Vishay Inventory
Vishay Inventory

Specifications

Product Category MOSFET Technology Si
Mounting Style SMD/SMT Transistor Polarity N-Channel
Number of Channels 1 Channel Vds - Drain-Source Breakdown Voltage 30 V
Id - Continuous Drain Current 7.8 A Rds On - Drain-Source Resistance 28 mOhms
Vgs - Gate-Source Voltage - 20 V, + 20 V Vgs th - Gate-Source Threshold Voltage 2.5 V
Qg - Gate Charge 10 nC Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 175 C Pd - Power Dissipation 4 W
Channel Mode Enhancement Qualification AEC-Q101
Tradename TrenchFET Configuration Single
Fall Time 8 ns Forward Transconductance - Min 21 S
Height 1.1 mm Length 3.05 mm
Product Type MOSFET Rise Time 12 ns
Factory Pack Quantity 3000 Subcategory MOSFETs
Transistor Type 1 N-Channel Typical Turn-Off Delay Time 13 ns
Typical Turn-On Delay Time 6 ns Width 1.65 mm
Unit Weight 0.000705 oz Package/Case TSOP-6

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