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SKM100GB125DN Image
SKM100GB125DN Image

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SKM100GB125DN

In Stock: 5,074

IGBT Half-Bridge Ultrafast, 1200V, SEMITRANS | SEMIKRON SKM100GB125DN

SKM100GB125DN Information

Description

IGBT MODULE, DUAL N CH, 1.2KV, 100A; Transistor Polarity: Dual N Channel; DC Collector Current: 100A; Collector Emitter Saturation Voltage Vce(on): 3.3V; Power Dissipation Pd: -; Collector Emitter Voltage V(br)ceo: 1.2kV; Tra

Specifications

ECCN (US) EAR99 Part Status NRND
Automotive No PPAP No
Channel Type N Configuration Dual
Typical Collector Emitter Saturation Voltage (V) 3.3 Maximum Collector-Emitter Voltage (V) 1200
Maximum Gate Emitter Voltage (V) ±20 Maximum Continuous Collector Current (A) 100
Minimum Operating Temperature (°C) -40 Maximum Operating Temperature (°C) 150
Mounting Screw PCB changed 7
Pin Count 7 Package/Case Case D-93-7

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