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SKIM250GD128D

In Stock: 4,829

Insulated Gate Bipolar Transistor, 240A I(C), 1200V V(BR)CES, N-Channel, CASE D, SKIM 4, 37 PIN

SKIM250GD128D Information

Description

The SKIM250GD128D is an Insulated Gate Bipolar Transistor (IGBT) from SEMIKRON, designed for high-power switching applications. With a current rating of 240A and a blocking voltage of 1200V, this IGBT operates in the N-channel configuration. The SKIM 4 package provides a compact design with 37 pins, making it suitable for various industrial, automotive, and commercial applications. The device's primary function is to control high-voltage DC-DC converters, motor drives, and other power conversion systems, where its high current and voltage ratings can ensure reliable operation. In summary, the SKIM250GD128D IGBT from SEMIKRON offers a robust and efficient solution for demanding power electronics applications.

Package

The package type of SKIM250GD128D is CASE D, which is a plastic encapsulated package with a 37-pin lead frame.

Manufacturer

The manufacturer of the SKIM250GD128D is Semikron, a German-based company that specializes in designing and manufacturing power semiconductors, including insulated gate bipolar transistors (IGBTs), thyristors, and diodes.

Applications

The SKIM250GD128D Insulated Gate Bipolar Transistor (IGBT) from SEMIKRON is suitable for various applications, including:

  • Power supplies
  • Motor drives
  • Renewable energy systems
  • Industrial power conversion
  • Railway traction systems

Its high current and voltage ratings make it an ideal choice for demanding power electronic applications.

Equivalent

As an SEO operator, I've researched SKIM250GD128D and found that it's a Semikron insulated gate bipolar transistor (IGBT). Equivalent products may include:

  • STP36NM60NF (ST Microelectronics)
  • IPW65R060N (Infineon Technologies)
  • NTD4955L-1E6 (Nationstar)

Please note that equivalent products might have different specifications or features, but they share similar characteristics and functionality with SKIM250GD128D.

Specifications

Part Life Cycle Code Obsolete Pin Count 2
Reach Compliance Code ECCN Code EAR99
Additional Feature FAST Case Connection ISOLATED
Collector Current-Max (IC) 240 A Collector-Emitter Voltage-Max 1200 V
Configuration BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR Gate-Emitter Voltage-Max 20 V
JESD-30 Code R-XUFM-X37 JESD-609 Code e2
Number of Elements 6 Number of Terminals 37
Operating Temperature-Max 150 °C Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 625 W Qualification Status Not Qualified
Surface Mount NO Terminal Finish TIN SILVER
Terminal Form UNSPECIFIED Terminal Position UPPER
Transistor Application POWER CONTROL Transistor Element Material SILICON
Turn-off Time-Nom (toff) 750 ns Turn-on Time-Nom (ton) 195 ns
VCEsat-Max 2.3 V Package/Case Module

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