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SKB02N120 +BOM
High-power switching device for demanding applicatio
TO-263-
Manufacturer:
-
Mfr.Part #:
SKB02N120
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Datasheet:
-
IGBT Type:
NPT
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Voltage - Collector Emitter Breakdown (Max):
1200 V
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Current - Collector (Ic) (Max):
6.2 A
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Current - Collector Pulsed (Icm):
9.6 A
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EDA/CAD Models:
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Availability: 3090 PCS
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SKB02N120 Information
General Description
The SKB02N120 is a high-performance insulated gate bipolar transistor (IGBT) that features NPT technology with a fast recovery anti-parallel EMCON diode. With a 6.2A I(C) and 1200V V(BR)CES, this N-channel TO-263AB transistor is suitable for a wide range of applications in power electronics, motor control, and renewable energy systems. Its fast switching characteristics and soft recovery diode make it an ideal choice for high-frequency and high-efficiency designs
Key Features
- 30% lower E off compared to previous generation
- Short circuit withstand time – 10μs
- Designed for operation above 30kHz
- High ruggedness, temperature stable behaviour
- Pb-free lead plating; RoHS compliant
- Qualified according to JEDEC for target applications
Application
- Potential Applications
- Infineon offers a comprehensive IGBT portfolio for the general purpose inverters, solar inverters, UPS, induction heating, microwave oven, rice cookers, welding and SMPS segments.
Specifications
Category | Discrete Semiconductor ProductsTransistorsIGBTsSingle IGBTs | Series | - |
IGBT Type | NPT | Voltage - Collector Emitter Breakdown (Max) | 1200 V |
Current - Collector (Ic) (Max) | 6.2 A | Current - Collector Pulsed (Icm) | 9.6 A |
Vce(on) (Max) @ Vge, Ic | 3.6V @ 15V, 2A | Power - Max | 62 W |
Switching Energy | 220µJ | Input Type | Standard |
Gate Charge | 11 nC | Td (on/off) @ 25°C | 23ns/260ns |
Test Condition | 800V, 2A, 91Ohm, 15V | Reverse Recovery Time (trr) | 50 ns |
Operating Temperature | -55°C ~ 150°C (TJ) | Mounting Type | Surface Mount |
Base Product Number | SKB02N | Product Category | IGBT Transistors |
Technology | Si | Mounting Style | SMD/SMT |
Configuration | Single | Collector- Emitter Voltage VCEO Max | 1.2 kV |
Collector-Emitter Saturation Voltage | 3.1 V | Maximum Gate Emitter Voltage | - 20 V, + 20 V |
Continuous Collector Current at 25 C | 6.2 A | Pd - Power Dissipation | 62 W |
Minimum Operating Temperature | - 55 C | Maximum Operating Temperature | + 150 C |
Continuous Collector Current Ic Max | 6.2 A | Height | 4.4 mm |
Length | 10.25 mm | Product Type | IGBT Transistors |
Factory Pack Quantity | 1000 | Subcategory | IGBTs |
Width | 9.9 mm | Part # Aliases | SP000012567 SKB02N120ATMA1 |
Unit Weight | 0.068654 oz | Package/Case | TO-263 |
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Returns and exchanges are supported, provided the items remain in their original condition.
In Stock: 3,090
Minimum Order: 1
Qty. | Unit Price | Ext. Price |
---|---|---|
1000+ | $1.288 | $1,288.00 |
500+ | $1.312 | $656.00 |
200+ | $1.359 | $271.80 |
1+ | $3.512 | $3.51 |
The prices above are for reference only.
9 out of the 10 uC's were defective.