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SKB02N120 +BOM

High-power switching device for demanding applicatio

SKB02N120 Information

General Description

The SKB02N120 is a high-performance insulated gate bipolar transistor (IGBT) that features NPT technology with a fast recovery anti-parallel EMCON diode. With a 6.2A I(C) and 1200V V(BR)CES, this N-channel TO-263AB transistor is suitable for a wide range of applications in power electronics, motor control, and renewable energy systems. Its fast switching characteristics and soft recovery diode make it an ideal choice for high-frequency and high-efficiency designs

Infineon Technologies Corporation Inventory

Key Features

  • 30% lower E off compared to previous generation
  • Short circuit withstand time – 10μs
  • Designed for operation above 30kHz
  • High ruggedness, temperature stable behaviour
  • Pb-free lead plating; RoHS compliant
  • Qualified according to JEDEC for target applications
Infineon Technologies Corporation Original Stock

Application

  • Potential Applications
  • Infineon offers a comprehensive IGBT portfolio for the general purpose inverters, solar inverters, UPS, induction heating, microwave oven, rice cookers,  welding and SMPS segments.

Specifications

Category Discrete Semiconductor ProductsTransistorsIGBTsSingle IGBTs Series -
IGBT Type NPT Voltage - Collector Emitter Breakdown (Max) 1200 V
Current - Collector (Ic) (Max) 6.2 A Current - Collector Pulsed (Icm) 9.6 A
Vce(on) (Max) @ Vge, Ic 3.6V @ 15V, 2A Power - Max 62 W
Switching Energy 220µJ Input Type Standard
Gate Charge 11 nC Td (on/off) @ 25°C 23ns/260ns
Test Condition 800V, 2A, 91Ohm, 15V Reverse Recovery Time (trr) 50 ns
Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount
Base Product Number SKB02N Product Category IGBT Transistors
Technology Si Mounting Style SMD/SMT
Configuration Single Collector- Emitter Voltage VCEO Max 1.2 kV
Collector-Emitter Saturation Voltage 3.1 V Maximum Gate Emitter Voltage - 20 V, + 20 V
Continuous Collector Current at 25 C 6.2 A Pd - Power Dissipation 62 W
Minimum Operating Temperature - 55 C Maximum Operating Temperature + 150 C
Continuous Collector Current Ic Max 6.2 A Height 4.4 mm
Length 10.25 mm Product Type IGBT Transistors
Factory Pack Quantity 1000 Subcategory IGBTs
Width 9.9 mm Part # Aliases SP000012567 SKB02N120ATMA1
Unit Weight 0.068654 oz Package/Case TO-263

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Ratings and Reviews

More
J
J**s 04/18/2024

9 out of the 10 uC's were defective.

13
G
G**y 03/03/2021

Prompt delivery and excellent customer support sets Avaq apart from the competition. The PEX8718-AB80BIG components were an absolute game-changer for my project. Can't thank Avaq enough! - Rachel C.

16
v
v**n 08/21/2020

The order arrived with a great delay, but it is the fault of our sluggish mail. The seller extended the delivery time. The product corresponds to the description. I only bet 555555555

5

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