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SISS30DN-T1-GE3 +BOM

Compact 80V N-Channel MOSFET with 15.9A current capability

SISS30DN-T1-GE3 Information

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Key Features

  • TrenchFET® Gen IV power MOSFET
  • Very low RDS - Qg figure-of-merit (FOM)
  • Tuned for the lowest RDS - Qoss FOM
  • 100 % Rg and UIS tested
    • Vishay Original Stock
    Vishay Inventory

    Specifications

    Product Category MOSFET REACH Details
    Technology Si Mounting Style SMD/SMT
    Transistor Polarity N-Channel Number of Channels 1 Channel
    Vds - Drain-Source Breakdown Voltage 80 V Id - Continuous Drain Current 54.7 A
    Rds On - Drain-Source Resistance 8.25 mOhms Vgs - Gate-Source Voltage - 20 V, + 20 V
    Vgs th - Gate-Source Threshold Voltage 2 V Qg - Gate Charge 40 nC
    Minimum Operating Temperature - 55 C Maximum Operating Temperature + 150 C
    Pd - Power Dissipation 57 W Channel Mode Enhancement
    Tradename TrenchFET, PowerPAK Configuration Single
    Fall Time 6 ns Forward Transconductance - Min 44 S
    Product Type MOSFET Rise Time 6 ns
    Factory Pack Quantity 3000 Subcategory MOSFETs
    Transistor Type 1 N-Channel Typical Turn-Off Delay Time 19 ns
    Typical Turn-On Delay Time 12 ns Unit Weight 0.032487 oz
    Package/Case PowerPAK-8

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