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SIS413DN-T1-GE3 +BOM

PowerPak 1212 MOSFET with P-channel, operating at -30V and capable of handling up to -18A of continuous drain current

Manufacturer:

Vishay
Mfr.Part #:

SIS413DN-T1-GE3
Datasheet:

SIS413DN-T1-GE3 Datasheet (PDF)
Technology:

Si
Mounting Style:

SMD/SMT
Transistor Polarity:

P-Channel
Number Of Channels:

1 Channel
EDA/CAD Models:

Request Free CAD Models for SIS413DN-T1-GE3

SIS413DN-T1-GE3 General Description

Introducing the SIS413DN-T1-GE3 MOSFET, a high-performance P-channel transistor designed for demanding automotive and industrial applications. With a maximum drain source voltage of -30V and a continuous drain current of -18A, this MOSFET is capable of handling high-power loads with ease. Its low on resistance and high threshold voltage make it ideal for high-current switching applications, while its PowerPAK 1212 case style and 8 pins provide easy integration into existing circuit designs. With a maximum operating temperature of 150°C and a power dissipation of 52W, this MOSFET is built to deliver reliable performance in harsh environments. Its TrenchFET Series designation signifies high-quality construction and performance, making it a top choice for engineers and designers looking for a versatile and dependable transistor solution

Key Features

None

Application

SWITCHING

Specifications

Product Category	MOSFET	Technology	Si
Mounting Style	SMD/SMT	Transistor Polarity	P-Channel
Number of Channels	1 Channel	Vds - Drain-Source Breakdown Voltage	30 V
Id - Continuous Drain Current	18 A	Rds On - Drain-Source Resistance	9.4 mOhms
Vgs - Gate-Source Voltage	- 10 V, + 10 V	Vgs th - Gate-Source Threshold Voltage	1 V
Qg - Gate Charge	73 nC	Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C	Pd - Power Dissipation	52 W
Channel Mode	Enhancement	Tradename	TrenchFET, PowerPAK
Series	SIS	Configuration	Single
Fall Time	8 ns	Forward Transconductance - Min	50 S
Height	1.04 mm	Length	3.3 mm
Product Type	MOSFET	Rise Time	11 ns, 82 ns
Factory Pack Quantity	3000	Subcategory	MOSFETs
Transistor Type	1 P-Channel	Typical Turn-Off Delay Time	40 ns, 45 ns
Typical Turn-On Delay Time	11 ns, 55 ns	Width	3.3 mm
Unit Weight	0.032487 oz	Package/Case	PowerPAK-1212-8