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SIGC06T60GE +BOM
Trans IGBT Chip N-CH 600V 3-Pin Die Wafer
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Manufacturer:
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Mfr.Part #:
SIGC06T60GE
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Datasheet:
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IC Max:
10.0 A
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VDS Max:
600.0 V
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VGE(th) Max:
6.5 V
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VGE(th) Min:
5.0 V
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Availability: 6354 PCS
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SIGC06T60GE Information
General Description
The SIGC06T60GE is a high-power IGBT bare die from Infineon, a leading semiconductor manufacturer in the industry. This device is designed for various industrial applications that require high voltage and current switching capabilities. The SIGC06T60GE is an ideal solution for applications such as motor drives, power supplies, and renewable energy systems. Its advantages include high efficiency, reliability, and scalability. However, matters needing attention include proper thermal management and selection of suitable external components to ensure optimal performance. For best results, refer to the datasheet and application notes provided by Infineon.
Key Features
- High-power IGBT with 10A IC max current
- High voltage capability up to 600V VDS max
- Low threshold voltage VGE(th) max of 6.5V
- Compatible with various industrial applications
Application
- Motor drives for industrial and commercial use
- Power supplies for data centers, telecom, and renewable energy systems
- Renewable energy systems such as solar and wind power inverters
Specifications
IC max | 10.0 A | VDS max | 600.0 V |
VGE(th) max | 6.5 V | VGE(th) min | 5.0 V |
Technology | IGBT3 | VCE(sat) max | 1.9 V |
VCE max | 600.0 V | Operating Temperature max | 175.0 °C |
Operating Temperature min | -40.0 °C | Package/Case | -- |
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In Stock: 6,354
Minimum Order: 1
Qty. | Unit Price | Ext. Price |
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1+ | - | - |
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