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SIGC06T60GE +BOM

Trans IGBT Chip N-CH 600V 3-Pin Die Wafer

SIGC06T60GE Information

General Description

The SIGC06T60GE is a high-power IGBT bare die from Infineon, a leading semiconductor manufacturer in the industry. This device is designed for various industrial applications that require high voltage and current switching capabilities. The SIGC06T60GE is an ideal solution for applications such as motor drives, power supplies, and renewable energy systems. Its advantages include high efficiency, reliability, and scalability. However, matters needing attention include proper thermal management and selection of suitable external components to ensure optimal performance. For best results, refer to the datasheet and application notes provided by Infineon.

Infineon Technologies Corporation Inventory

Key Features

  • High-power IGBT with 10A IC max current
  • High voltage capability up to 600V VDS max
  • Low threshold voltage VGE(th) max of 6.5V
  • Compatible with various industrial applications
Infineon Technologies Corporation Original Stock

Application

  • Motor drives for industrial and commercial use
  • Power supplies for data centers, telecom, and renewable energy systems
  • Renewable energy systems such as solar and wind power inverters

Specifications

IC max 10.0 A VDS max 600.0 V
VGE(th) max 6.5 V VGE(th) min 5.0 V
Technology IGBT3 VCE(sat) max 1.9 V
VCE max 600.0 V Operating Temperature max 175.0 °C
Operating Temperature min -40.0 °C Package/Case --

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