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SIDR668ADP-T1-RE3 Image
SIDR668ADP-T1-RE3 Image
3d-img SIDR668ADP-T1-RE3 Image

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SIDR668ADP-T1-RE3

In Stock: 3,105

High-voltage N-channel MOSFET designed for robust and reliable performance.

SIDR668ADP-T1-RE3 Information

Vishay Inventory

Features

  • TrenchFET® Gen IV power MOSFET
  • Very low RDS - Qg figure-of-merit (FOM)
  • Tuned for the lowest RDS - Qoss FOM
  • 100 % Rg and UIS tested
    • Vishay Inventory
    Vishay Inventory

    Specifications

    Product Category MOSFET Technology Si
    Mounting Style SMD/SMT Transistor Polarity N-Channel
    Number of Channels 1 Channel Vds - Drain-Source Breakdown Voltage 100 V
    Id - Continuous Drain Current 104 A Rds On - Drain-Source Resistance 4.8 mOhms
    Vgs - Gate-Source Voltage - 20 V, + 20 V Vgs th - Gate-Source Threshold Voltage 4 V
    Qg - Gate Charge 42 nC Minimum Operating Temperature - 55 C
    Maximum Operating Temperature + 150 C Pd - Power Dissipation 125 W
    Channel Mode Enhancement Tradename TrenchFET, PowerPAK
    Configuration Single Fall Time 10 ns
    Forward Transconductance - Min 85 S Product Type MOSFET
    Rise Time 18 ns Factory Pack Quantity 3000
    Subcategory MOSFETs Transistor Type 1 N-Channel
    Typical Turn-Off Delay Time 36 ns Typical Turn-On Delay Time 21 ns
    Unit Weight 0.026455 oz Package/Case SOIC-8

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