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See Technical Specifications

SIA456DJ-T3-GE3 +BOM

750mA current rating for demanding power management

Manufacturer:

Vishay
Mfr.Part #:

SIA456DJ-T3-GE3
Datasheet:

SIA456DJ-T3-GE3 Datasheet (PDF)
Technology:

Si
Mounting Style:

SMD/SMT
Transistor Polarity:

N-Channel
Number Of Channels:

1 Channel
EDA/CAD Models:

Request Free CAD Models for SIA456DJ-T3-GE3

SIA456DJ-T3-GE3 Information

Avaq Semiconductor offers the highly versatile and reliable SIA456DJ-T3-GE3 driver, produced by Vishay. With its multifunctional and high-performance capabilities, this component is an excellent choice for a wide range of electronic projects.

To ensure that you have all the necessary information to make the most of this component, Avaq provides a free datasheet PDF, as well as circuit diagrams, pin layouts, pin details, pin voltage ratings, and equivalent components for the SIA456DJ-T3-GE3.

Avaq also offers free samples. Simply fill out and submit the sample request form to receive your free samples for testing. If you have any questions, please feel free to contact us at any time.

Specifications

Product Category	MOSFET	Technology	Si
Mounting Style	SMD/SMT	Transistor Polarity	N-Channel
Number of Channels	1 Channel	Vds - Drain-Source Breakdown Voltage	200 V
Id - Continuous Drain Current	2.6 A	Rds On - Drain-Source Resistance	1.38 Ohms
Vgs - Gate-Source Voltage	- 16 V, + 16 V	Vgs th - Gate-Source Threshold Voltage	600 mV
Qg - Gate Charge	14.5 nC	Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C	Pd - Power Dissipation	19 W
Channel Mode	Enhancement	Tradename	TrenchFET, PowerPAK
Configuration	Single	Fall Time	20 ns
Forward Transconductance - Min	5 S	Product Type	MOSFET
Rise Time	25 ns	Factory Pack Quantity	10000
Subcategory	MOSFETs	Transistor Type	1 N-Channel
Typical Turn-Off Delay Time	30 ns	Typical Turn-On Delay Time	10 ns
Package/Case	SOT-323