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SI7116BDN-T1-GE3 +BOM

Optimized for use in DC/DC converters and power supplies

SI7116BDN-T1-GE3 Information

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Key Features

  • TrenchFET® Gen IV power MOSFET
  • Very low Qg and Qoss reduce power loss and improve efficiency
  • Optimized Qg, Qgd, and Qgd/Qgs ratio reduces switching related power loss
  • 100 % Rg and UIS tested
    • Vishay Original Stock
    Vishay Inventory

    Specifications

    Product Category MOSFET Technology Si
    Mounting Style SMD/SMT Transistor Polarity N-Channel
    Number of Channels 1 Channel Vds - Drain-Source Breakdown Voltage 40 V
    Id - Continuous Drain Current 65 A Rds On - Drain-Source Resistance 7.4 mOhms
    Vgs - Gate-Source Voltage - 20 V, + 20 V Vgs th - Gate-Source Threshold Voltage 2.5 V
    Qg - Gate Charge 31.4 nC Minimum Operating Temperature - 55 C
    Maximum Operating Temperature + 150 C Pd - Power Dissipation 62.5 W
    Channel Mode Enhancement Tradename TrenchFET
    Configuration Single Fall Time 5 ns
    Forward Transconductance - Min 80 S Product Type MOSFET
    Rise Time 5 ns Factory Pack Quantity 3000
    Subcategory MOSFETs Transistor Type TrenchFET Gen IV Power MOSFET
    Typical Turn-Off Delay Time 25 ns Typical Turn-On Delay Time 10 ns
    Unit Weight 0.017231 oz Package/Case PowerPAK-8

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    Minimum Order: 1

    Qty. Unit Price Ext. Price
    1+ $0.579 $0.58
    200+ $0.225 $45.00
    500+ $0.218 $109.00
    1000+ $0.213 $213.00

    The prices above are for reference only.

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