Description
The SI2365EDS-T1-GE3 is a P-Channel 20V (D-S) MOSFET from Vishay, packaged in SOT-23-3. This device features advanced technology that enables sophisticated control algorithms, excellent dynamic response, and compact form factor. It operates fully functional up to 150°C.
The SI2365EDS-T1-GE3 offers high power density, low noise emission, and robust fault protection. Its high-speed switching, low voltage drop, and compact package make it suitable for various applications. The device also boasts advanced gate structure, improved thermal performance, wide operating range, superior current handling, and low input capacitance.
This MOSFET is fully functional up to -55°C and features a ruggedized package design, high reliability, and long lifespan. Overall, the SI2365EDS-T1-GE3 is an efficient and reliable power management solution for various applications.
Features
Based on the provided information, the features of the SI2365EDS-T1-GE3 P-Channel 20 V (D-S) MOSFET are:
- Sophisticated control algorithm
- Excellent dynamic response
- Compact form factor
- Fully functional to 150°C
- High power density
- Low noise emission
- Robust fault protection
- High-speed switching
- Low voltage drop
- Compact package
- Advanced gate structure
- Improved thermal performance
- Wide operating range
- Superior current handling
- Low input capacitance
- Fully functional to -55°C
- Ruggedized package design
- High reliability
- Long lifespan
Please note that these features are based on the provided information and may not be an exhaustive list of all possible features.
Package
The package type for SI2365EDS-T1-GE3 is SOT-23-3.
Pinout
Based on the product information, the SI2365EDS-T1-GE3 is a P-Channel 20 V (D-S) MOSFET packaged in SOT-23-3.
The pin count for this component is 3:
- Drain (D)
- Source (S)
- Gate (G)
These pins are used to control the flow of current between the drain and source terminals. The gate terminal is used to apply a voltage signal to control the MOSFET's on/off state.
Manufacturer
The manufacturer of the SI2365EDS-T1-GE3 is Vishay.
Applications
The SI2365EDS-T1-GE3 P-Channel 20 V (D-S) MOSFET from Vishay is suitable for various applications, including:
- Power management in consumer electronics
- Automotive systems
- Industrial control equipment
- Medical devices
- Aerospace and defense systems
Its compact SOT-23-3 package and high-performance features make it an ideal choice for demanding applications requiring low noise emission, robust fault protection, and high-speed switching.
Equivalent
Based on the product information, the equivalent products of SI2365EDS-T1-GE3 are likely to be other P-channel MOSFETs with similar specifications, such as:
- STP16NF50L
- NXP PCA9504A
- ON Semiconductor NCP3020P2G
Please note that this is not an exhaustive list and there may be other equivalent products available in the market.
Payment
Shipping & Packing
Warranty
