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SI2338DS-T1-BE3 +BOM

Power management made easy with this flexible and compact MOSFET solution.

SI2338DS-T1-BE3 Information

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Key Features

  • TrenchFET® power MOSFET
  • Low on-resistance
  • 100 % Rg tested
    • Vishay Original Stock
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    Specifications

    Product Category MOSFET Technology Si
    Mounting Style SMD/SMT Transistor Polarity N-Channel
    Number of Channels 1 Channel Vds - Drain-Source Breakdown Voltage 30 V
    Id - Continuous Drain Current 6 A Rds On - Drain-Source Resistance 28 mOhms
    Vgs - Gate-Source Voltage - 20 V, + 20 V Vgs th - Gate-Source Threshold Voltage 2.5 V
    Qg - Gate Charge 4.2 nC Minimum Operating Temperature - 55 C
    Maximum Operating Temperature + 150 C Pd - Power Dissipation 2.5 W
    Channel Mode Enhancement Configuration Single
    Fall Time 7 ns Product Type MOSFET
    Rise Time 11 ns Factory Pack Quantity 3000
    Subcategory MOSFETs Transistor Type 1 N-Channel
    Typical Turn-Off Delay Time 20 ns Typical Turn-On Delay Time 3 ns
    Part # Aliases SI2338DS-T1-GE3 Unit Weight 0.000282 oz
    Package/Case SOT-23-3

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